IPB80N06S2H5 datasheet, PDF - EEWORLD Datasheet

IPB80N06S2H5: DescriptionMOSFET MOSFET; Categorysemiconductor Discrete semiconductor; File Size153KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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MOSFET MOSFET

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	80 A
Rds On - Drain-Source Resistance	5.2 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Configuration	Single
Pd - Power Dissipation	300 W
Channel Mode	Enhancement
Packaging	Reel
Height	4.4 mm
Length	10 mm
Transistor Type	1 N-Channel
Width	9.25 mm
Fall Time	22 ns
Rise Time	23 ns
Typical Turn-Off Delay Time	48 ns
Typical Turn-On Delay Time	23 ns
Unit Weight	0.079014 oz

	IPB80N06S2H5	IPP80N06S2-H5	IPB80N06S2-H5	IPP80N06S2H5
Description	MOSFET MOSFET	MOSFET N-Ch 55V 80A TO220-3 OptiMOS	MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS	MOSFET MOSFET
Configuration	Single	Single	SINGLE WITH BUILT-IN DIODE	Single
Product Attribute	Attribute Value	Attribute Value	-	Attribute Value
Manufacturer	Infineon	Infineon	-	Infineon
Product Category	MOSFET	MOSFET	-	MOSFET
Technology	Si	Si	-	Si
Mounting Style	SMD/SMT	Through Hole	-	Through Hole
Package / Case	TO-263-3	TO-220-3	-	TO-220-3
Number of Channels	1 Channel	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	N-Channel	-	N-Channel
Vds - Drain-Source Breakdown Voltage	55 V	55 V	-	55 V
Id - Continuous Drain Current	80 A	80 A	-	80 A
Rds On - Drain-Source Resistance	5.2 mOhms	5.5 mOhms	-	5.5 mOhms
Vgs - Gate-Source Voltage	20 V	20 V	-	20 V
Minimum Operating Temperature	- 55 C	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	-	+ 175 C
Pd - Power Dissipation	300 W	300 W	-	300 W
Channel Mode	Enhancement	Enhancement	-	Enhancement
Packaging	Reel	Tube	-	Tube
Height	4.4 mm	15.65 mm	-	15.65 mm
Length	10 mm	10 mm	-	10 mm
Transistor Type	1 N-Channel	1 N-Channel	-	1 N-Channel
Width	9.25 mm	4.4 mm	-	4.4 mm
Fall Time	22 ns	22 ns	-	22 ns
Rise Time	23 ns	23 ns	-	23 ns
Typical Turn-Off Delay Time	48 ns	48 ns	-	48 ns
Typical Turn-On Delay Time	23 ns	23 ns	-	23 ns
Unit Weight	0.079014 oz	0.211644 oz	-	0.211644 oz

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