DTA143T series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
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Outline
Parameter
V
CEO
I
C
R
1
Value
-50V
-100mA
4.7kΩ
SOT-723
SOT-416FL
DTA143TM
(VMT3)
SOT-416
DTA143TEB
(EMT3F)
SOT-323FL
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Features
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary NPN Types: DTC143T series
DTA143TE
(EMT3)
SOT-323
DTA143TUB
(UMT3F)
SOT-346
DTA143TUA
(UMT3)
DTA143TKA
(SMT3)
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Application
INVERTER, INTERFACE,DRIVER
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Inner circuit
DTA143TM/ DTA143TEB/ DTA143TUB
DTA143TE/ DTA143TUA/ DTA143TKA
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Packaging specifications
Part No.
DTA143TM
DTA143TEB
DTA143TE
DTA143TUB
DTA143TUA
DTA143TKA
Package
SOT-723
SOT-416FL
SOT-416
SOT-323FL
SOT-323
SOT-346
Package
size
1212
1616
1616
2021
2021
2928
Taping
code
T2L
TL
TL
TL
T106
T146
1/9
Reel size Tape width
(mm)
(mm)
180
180
180
180
180
180
8
8
8
8
8
8
Basic
ordering
unit.(pcs)
8000
3000
3000
3000
3000
3000
Marking
93
93
93
93
93
93
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© 2016 ROHM Co., Ltd. All rights reserved.
20160123 - Rev.003
DTA143T series
Datasheet
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Absolute maximum ratings
(T
a
= 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA143TM
DTA143TEB
Power dissipation
DTA143TE
DTA143TUB
DTA143TUA
DTA143TKA
Junction temperature
Range of storage temperature
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Electrical characteristics
(T
a
= 25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Values
-50
-50
-5
-100
150
150
Unit
V
V
V
mA
P
D*1
150
200
200
200
mW
T
j
T
stg
150
-55 to +150
℃
℃
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T*2
Conditions
Min.
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
= -50V
V
EB
= -4V
I
C
= -5mA, I
B
= -0.25mA
Values
Typ.
-
-
-
-
-
-
250
4.7
250
Max.
-
-
-
-500
-500
-300
600
6.11
-
Unit
V
V
V
nA
nA
mV
-
kΩ
MHz
-50
-50
-5
-
-
-
100
3.29
-
DC current gain
Input resistance
Transition frequency
V
CE
= -5V, I
C
= -1mA
-
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
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© 2016 ROHM Co., Ltd. All rights reserved.
2/9
20160123 - Rev.003
DTA143T series
Datasheet
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Electrical characteristic curves(Ta=25
℃
)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2016 ROHM Co., Ltd. All rights reserved.
3/9
20160123 - Rev.003
DTA143T series
l
Dimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/9
20160123 - Rev.003
DTA143T series
l
Dimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/9
20160123 - Rev.003
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