EEWORLDEEWORLDEEWORLD

Part Number

Search

BC546B

Description
Bipolar Transistors - BJT NPN 80Vcbo 80 Vceo 200mA 500mW Trans
CategoryDiscrete semiconductor    The transistor   
File Size399KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BC546B Online Shopping

Suppliers Part Number Price MOQ In stock  
BC546B - - View Buy Now

BC546B Overview

Bipolar Transistors - BJT NPN 80Vcbo 80 Vceo 200mA 500mW Trans

BC546B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
BC546,A,B
BC547,A,B,C
BC548,A,B,C
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC546, BC547,
BC548 series devices are silicon NPN small signal
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
IEM
PD
TJ, Tstg
Θ
JA
Θ
JC
BC546
80
80
65
6.0
BC547
BC548
50
30
50
30
45
30
6.0
5.0
100
200
200
200
500
-65 to +150
250
150
UNITS
V
V
V
V
mA
mA
mA
mA
mW
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=0.5mA
VBE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
580
VBE(ON)
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=10μA (BC546,A, BC547,A, BC548,A)
hFE
VCE=5.0V, IC=10μA (BC546B, BC547B, BC548B)
hFE
VCE=5.0V, IC=10μA (BC547C, BC548C)
hFE
VCE=5.0V, IC=2.0mA (BC546)
110
hFE
VCE=5.0V, IC=2.0mA (BC546A, BC547A, BC548A) 110
hFE
VCE=5.0V, IC=2.0mA (BC546B, BC547B, BC548B) 200
hFE
VCE=5.0V, IC=2.0mA (BC547, BC548)
110
hFE
VCE=5.0V, IC=2.0mA (BC547C, BC548C)
420
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz
125
fT
VCE=5.0V, IC=10mA, f=35MHz
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
NF
VCE=5.0V, IC=0.2mA, RG=2.0kΩ,
B=200Hz, f=1.0kHz
TYP
MAX
15
5.0
250
600
700
900
700
770
90
150
270
450
220
450
800
800
900
300
2.5
9.0
2.0
10
UNITS
nA
μA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
R1 (13-December 2013)

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号