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KSC5302D
KSC5302D
High Voltage High Speed Power Switch
Application
High Breakdown Voltage : BV
CBO
=800V
Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half bridge light ballast Applications
No need to interest an h
FE
value because of low variable storage-time
spread
• Even though corner spirit product
• Low base drive requirement
•
•
•
•
B
Equivalent Circuit
C
1
E
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25°C)
Junction Temperature
Storage Temperature
Value
800
400
12
2
5
1
2
50
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjc
R
θja
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Rating
2.5
62.5
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5302D
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
t
ON
t
STG
t
F
t
STG
t
F
V
F
t
rr
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Turn ON time
Storage Time
Fall Time
Storage Time
Fall Time
Diode Forward Voltage
*Reverse Recovery Time
(di/dt = 10A/µs)
Test Condition
I
C
=1mA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=500V, I
E
=0
V
EB
= 9V, I
C
= 0
V
CE
=1V, I
C
=0.4A
V
CE
=1V, I
C
=1A
I
C
=0.4A, I
B
=0.04A
I
C
=1A, I
B
=0.2A
I
C
=0.4A, I
B
=0.04A
I
C
=1A, I
B
=0.2A
V
CB
= 10V, f=1MHz
V
CC
=300V, I
C
=1A
I
B1
= 0.2A, I
B2
=-0.5A,
R
L
= 300Ω
V
CC
=15V, V
Z
=300V
I
C
= 0.8A, I
B1
= 0.16A
I
B2
= -0.16A , L = 200µH
I
F
= 0.4A
I
F
= 1A
I
F
= 0.2A
I
F
= 0.4A
I
F
= 1A
Min.
800
400
12
-
-
20
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
1
1.4
Max.
-
-
-
10
10
-
-
0.4
0.5
0.9
1.0
75
150
2
0.2
2.35
150
1.2
1.5
-
-
-
V
V
V
V
pF
ns
µs
µs
µs
ns
V
V
ns
µs
µs
Units
V
V
V
µA
µA
*Pulse Test : Pulse Width=5mS, Duty cycles
≤
10%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5302D
Typcial Characteristics
5
I
C
[A], COLLECTOR CURRENT
4
3
I
B
= 100mA
2
h
FE
, DC CURRENT GAIN
I
B
= 500mA
I
B
= 450mA
I
B
= 400mA
I
B
= 350mA
I
B
= 300mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
100
T
a
= 125 C
25 C
o
-25 C
o
o
V
CE
= 5V
10
I
B
= 50mA
1
I
B
= 0
0
0
1
2
3
4
5
6
7
8
9
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
100
10
T
a
= 125 C
25 C
o
o
V
CE
= 1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
-20 C
o
1
V
BE
(sat)
10
V
CE
(sat)
0.1
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
10
I
C
= 5I
B
I
C
= 5I
B
V
CE
(sat)[V], SATURATION VOLTAGE
25 C
1
o
V
BE
[V], SATURATION VOLTAGE
T
a
= 125 C
0.1
o
1
-20 C
25 C
T
a
= 125 C
o
o
o
-20 C
o
0.01
0.01
0.1
1
10
0.1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Collector-Base Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5302D
Typical Characteristics
(Continued)
10
10
t
STG
, t
F
[
µ
s], TIME
1
t
STG
V
F
[V], FORWARD DIODE VOLTAGE
10
V
CC
= 300V
I
C
= 5I
B1
= -2.5I
B2
1
t
F
0.1
0.01
0.1
1
0.1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
F
[A], FORWARD DIODE CURRENT
Figure 7. Switching Time
Figure 8. Forwrd Diode Voltage
1.6
1000
di/dt = 10A/
µ
s
f = 1MHz
trr[
µ
s], REVERSE RECOVERY TIME
C
ob
[pF], CAPACITANCE
1.4
100
1.2
1.0
10
0.8
1
0.2
0.4
0.6
0.8
1.0
1
10
100
I
f
[A], FORWARD CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 9. Reverse Recovery Time
Figure 10. Collector Outpt Capacitance
100
80
I
C
[A], COLLECTOR CURRENT
10
P
C
[W], POWER DISSIPATION
1000
60
DC
1
5ms
1ms
10
µ
s
1
µ
s
40
0.1
20
0.01
10
100
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 11. Safe Operating Area
Figure 12. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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