IPB120N04S302ATMA1 datasheet, PDF

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IPB120N04S302ATMA1: DescriptionMOSFET N-CHANNEL_30/40V; CategoryDiscrete semiconductor The transistor; File Size189KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPB120N04S302ATMA1 Overview

MOSFET N-CHANNEL_30/40V

IPB120N04S302ATMA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	1880 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	120 A
Maximum drain-source on-resistance	0.0023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	480 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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IPB120N04S3-02

IPI120N04S3-02, IPP120N04S3-02

OptiMOS

-T

Power-Transistor

Product Summary

DS(on),max

(SMD version)

2.0

120

mΩ

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Type

IPB120N04S3-02

IPI120N04S3-02

IPP120N04S3-02

Package

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Marking

3PN0402

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol

Conditions

=25 °C,

=10 V

=100 °C,

=10 V

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

D,pulse

tot

stg

=25 °C

=80 A

Value

120

480

1880

±20

300

-55 ... +175

55/175/56

°C

Unit

Rev. 1.0

page 1

2007-04-30

IPB120N04S302ATMA1 Related Products

	IPB120N04S302ATMA1	IPP120N04S3-02	IPI120N04S302AKSA1	IPP120N04S302AKSA1
Description	MOSFET N-CHANNEL_30/40V	MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T	MOSFET N-CHANNEL_30/40V	MOSFET N-CHANNEL_30/40V
Configuration	SINGLE WITH BUILT-IN DIODE	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Is it Rohs certified?	conform to	-	conform to	conform to
package instruction	SMALL OUTLINE, R-PSSO-G2	-	IN-LINE, R-PSIP-T3	ROHS COMPLIANT, TO-220, 3 PIN
Reach Compliance Code	compliant	-	compliant	not_compliant
ECCN code	EAR99	-	EAR99	EAR99
Other features	ULTRA LOW RESISTANCE	-	ULTRA LOW RESISTANCE	ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	1880 mJ	-	1880 mJ	1880 mJ
Minimum drain-source breakdown voltage	40 V	-	40 V	40 V
Maximum drain current (ID)	120 A	-	120 A	120 A
Maximum drain-source on-resistance	0.0023 Ω	-	0.0023 Ω	0.0023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	-	TO-262AA	TO-220AB
JESD-30 code	R-PSSO-G2	-	R-PSIP-T3	R-PSFM-T3
Humidity sensitivity level	1	-	1	1
Number of components	1	-	1	1
Number of terminals	2	-	3	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	480 A	-	480 A	480 A
surface mount	YES	-	NO	NO
Terminal form	GULL WING	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	-	SILICON	SILICON

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