MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T
| Parameter Name | Attribute value |
| Product Category | MOSFET |
| Manufacturer | Infineon |
| RoHS | Details |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 120 A |
| Rds On - Drain-Source Resistance | 2.3 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Qualification | AEC-Q100 |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Fall Time | 18 ns |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 300 W |
| Rise Time | 19 ns |
| Factory Pack Quantity | 500 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 57 ns |
| Typical Turn-On Delay Time | 35 ns |
| Width | 4.4 mm |
| Unit Weight | 0.211644 oz |
| IPP120N04S3-02 | IPI120N04S302AKSA1 | IPB120N04S302ATMA1 | IPP120N04S302AKSA1 | |
|---|---|---|---|---|
| Description | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T | MOSFET N-CHANNEL_30/40V | MOSFET N-CHANNEL_30/40V | MOSFET N-CHANNEL_30/40V |
| Configuration | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Is it Rohs certified? | - | conform to | conform to | conform to |
| package instruction | - | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | ROHS COMPLIANT, TO-220, 3 PIN |
| Reach Compliance Code | - | compliant | compliant | not_compliant |
| ECCN code | - | EAR99 | EAR99 | EAR99 |
| Other features | - | ULTRA LOW RESISTANCE | ULTRA LOW RESISTANCE | ULTRA LOW RESISTANCE |
| Avalanche Energy Efficiency Rating (Eas) | - | 1880 mJ | 1880 mJ | 1880 mJ |
| Minimum drain-source breakdown voltage | - | 40 V | 40 V | 40 V |
| Maximum drain current (ID) | - | 120 A | 120 A | 120 A |
| Maximum drain-source on-resistance | - | 0.0023 Ω | 0.0023 Ω | 0.0023 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | - | TO-262AA | TO-263AB | TO-220AB |
| JESD-30 code | - | R-PSIP-T3 | R-PSSO-G2 | R-PSFM-T3 |
| Humidity sensitivity level | - | 1 | 1 | 1 |
| Number of components | - | 1 | 1 | 1 |
| Number of terminals | - | 3 | 2 | 3 |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | IN-LINE | SMALL OUTLINE | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | - | 480 A | 480 A | 480 A |
| surface mount | - | NO | YES | NO |
| Terminal form | - | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| Terminal location | - | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | - | SILICON | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
