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HVB187YP

Description
SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size141KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVB187YP Overview

SILICON, PIN DIODE

HVB187YP Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionCMPAK-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
applicationATTENUATOR
ConfigurationSEPARATE, 2 ELEMENTS
Maximum diode capacitance2.4 pF
Diode component materialsSILICON
Maximum diode forward resistance5.5 Ω
Diode typePIN DIODE
Maximum forward voltage (VF)1 V
frequency bandHIGH FREQUENCY
JESD-30 codeR-PDSO-G4
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
Maximum reverse current0.1 µA
Reverse test voltage60 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
HVB187YP
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
REJ03G0439-0100
(Previous: ADE-208-1411)
Rev.1.00
Dec 16, 2004
Features
Low forward resistance. (rf = 5.5
max)
CMPAK-4 package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HVB187YP
Laser Mark
P1
Package Code
CMPAK-4
Pin Arrangement
4
3
4
3
1. Anode
2. Anode
3. Cathode
4. Cathode
P1
1
(Top View)
2
1
(Top View)
2
Rev.1.00 Dec 16, 2004 page 1 of 4
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