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GS8160E18T-150

Description
1M x 18, 512K x 36 18Mb Sync Burst SRAMs
Categorystorage    storage   
File Size439KB,25 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS8160E18T-150 Overview

1M x 18, 512K x 36 18Mb Sync Burst SRAMs

GS8160E18T-150 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.B
Maximum access time7.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
Maximum clock frequency (fCLK)150 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density18874368 bi
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.02 A
Minimum standby current2.3 V
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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