AT49BV640D-70CI datasheet, PDF

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AT49BV640D-70CI: DescriptionNOR Flash 64M Flash 70ns; Categorystorage; File Size329KB，32 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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AT49BV640D-70CI Overview

NOR Flash 64M Flash 70ns

AT49BV640D-70CI Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	NOR Flash
RoHS	N
Mounting Style	SMD/SMT
Package / Case	CBGA-48
Memory Size	64 Mbit
Interface Type	Parallel
Organization	4 M x 16
Timing Type	Asynchronous
Data Bus Width	16 bit
Supply Voltage - Min	2.65 V
Supply Voltage - Max	3.6 V
Supply Current - Max	15 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Memory Type	NOR
Speed	70 ns
Architecture	Sector
Standard	Common Flash Interface (CFI)
Factory Pack Quantity	276

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Features

•

Single Voltage Operation Read/Write: 2.65V - 3.6V

•

Access Time – 70 ns

•

Sector Erase Architecture

– One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with

Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Fast Word Program Time – 10 µs

Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 100 ms

Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming Data from Any Sector by Suspending

Erase of a Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

Low-power Operation

– 10 mA Active

– 15 µA Standby

VPP Pin for Write Protection and Accelerated Program Operation

WP Pin for Sector Protection

RESET Input for Device Initialization

Flexible Sector Protection

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

Minimum 100,000 Erase Cycles

Common Flash Interface (CFI)

Green (Pb/Halide-free/RoHS Compliant) Packaging

•

64-megabit

(4M x 16)

3-volt Only

Flash Memory

AT49BV640D

AT49BV640DT

•

1. Description

The AT49BV640D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304

words of 16 bits each. The memory is divided into 135 sectors for erase operations.

The device is offered in a 48-ball CBGA package. The device has CE and OE control

signals to avoid any bus contention. This device can be read or reprogrammed using

a single power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place

the device in other operation modes such as program and erase. The device has

the capability to protect the data in any sector (see

“Flexible Sector Protection” on

page 6).

To increase the flexibility of the device, it contains an Erase Suspend and Program

Suspend feature. This feature will put the erase or program on hold for any amount of

time and let the user read data from or program data to any of the remaining sectors

within the memory.

The VPP pin provides data protection. When the V

input is below 0.4V, the program

and erase functions are inhibited. When V

is at 1.65V or above, normal program

and erase operations can be performed. With V

at 10.0V, the program (Dual-word

Program command) operation is accelerated.

3608C–FLASH–11/06

4.3

Reset

A RESET input pin is provided to ease some system applications. When RESET is at a logic

high level, the device is in its standard operating mode. A low level on the RESET pin halts the

present device operation and puts the outputs of the device in a high-impedance state. When

a high level is reasserted on the RESET pin, the device returns to read mode.

4.4

Erase

Before a word can be reprogrammed it must be erased. The erased state of the memory bits is

a logical “1”. The individual sectors can be erased by using the Sector Erase command.

4.4.1

Sector Erase

The device is organized into 135 sectors (SA0 - SA134) that can be individually erased. The

Sector Erase command is a two-bus cycle operation. The sector address and the D0H Data

Input command are latched on the rising edge of WE. The sector erase starts after the rising

edge of WE of the second cycle provided the given sector has not been protected. The erase

operation is internally controlled; it will automatically time to completion. The maximum time to

erase a sector is t

SEC

. An attempt to erase a sector that has been protected will result in the

operation terminating immediately.

4.5

Word Programming

Once a memory sector is erased, it is programmed (to a logical “0”) on a word-by-word basis.

Programming is accomplished via the Internal Device command register and is a two-bus

cycle operation. The device will automatically generate the required internal program pulses.

Any commands except Read Status Register, Program Suspend and Program Resume writ-

ten to the chip during the embedded programming cycle will be ignored. If a hardware reset

happens during programming, the data at the location being programmed will be corrupted.

Please note that a data “0” cannot be programmed back to a “1”; only erase operations can

convert “0”s to “1”s. Programming is completed after the specified t

cycle time. If the pro-

gram status bit is a “1”, the device was not able to verify that the program operation was

performed successfully. The status register indicates the programming status. While the pro-

gram sequence executes, status bit I/O7 is “0”.

4.6

VPP Pin

The circuitry of the AT49BV640D(T) is designed so that the device cannot be programmed or

erased if the V

voltage is less that 0.4V. When V

is at 1.65V or above, normal program

and erase operations can be performed. The VPP pin cannot be left floating.

AT49BV640D(T)

3608C–FLASH–11/06

AT49BV640D-70CI Related Products

	AT49BV640D-70CI
Description	NOR Flash 64M Flash 70ns
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	NOR Flash
RoHS	N
Mounting Style	SMD/SMT
Package / Case	CBGA-48
Memory Size	64 Mbit
Interface Type	Parallel
Organization	4 M x 16
Timing Type	Asynchronous
Data Bus Width	16 bit
Supply Voltage - Min	2.65 V
Supply Voltage - Max	3.6 V
Supply Current - Max	15 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Memory Type	NOR
Speed	70 ns
Architecture	Sector
Standard	Common Flash Interface (CFI)
Factory Pack Quantity	276

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Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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