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BZX55C36-TAP

Description
Zener Diodes 36 Volt 0.5W 5%
Categorysemiconductor    Discrete semiconductor   
File Size104KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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Zener Diodes 36 Volt 0.5W 5%

BZX55C36-TAP Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryZener Diodes
RoHSDetails
Vz - Zener Voltage36 V
Mounting StyleThrough Hole
Package / CaseDO-35-2
Pd - Power Dissipation500 mW (1/2 W)
Voltage Tolerance5 %
Voltage Temperature Coefficient0.12 %/K
Zener Current100 nA
Zz - Zener Impedance80 Ohms
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Test Current5 mA
PackagingAmmo Pack
Diameter1.7 mm
Length3.9 mm
ProductSmall Signal Zener Diodes
Termination StyleAxial
TypeVoltage Regulator
Ir - Reverse Current100 nA
Factory Pack Quantity10000
Vf - Forward Voltage1.5 V
Unit Weight0.004833 oz
BZX55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZX55-series
BZX55-series
ORDERING CODE
BZX55-series-TR
BZX55-series-TAP
TAPED UNITS PER REEL
10 000 per 13" reel
10 000 per ammopack
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
l = 4 mm, T
L
= constant
TEST CONDITION
l = 4 mm, T
L
= 25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.7, 06-May-13
Document Number: 85604
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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