SI4896DY datasheet, PDF - EEWORLD Datasheet

SI4896DY: DescriptionMOSFET 80V Vds 20V Vgs SO-8; CategoryDiscrete semiconductor The transistor; File Size179KB，8 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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MOSFET 80V Vds 20V Vgs SO-8

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	6.7 A
Maximum drain-source on-resistance	0.0165 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

	SI4896DY	SI4896DY-T1-GE3
Description	MOSFET 80V Vds 20V Vgs SO-8	MOSFET 80V Vds 20V Vgs SO-8
Is it Rohs certified?	incompatible	conform to
Maker	Vishay	Vishay
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V
Maximum drain current (ID)	6.7 A	6.7 A
Maximum drain-source on-resistance	0.0165 Ω	0.0165 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e0	e3
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	30
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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