BD244A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BD244A

BD244A: DescriptionBipolar Transistors - BJT 65W PNP Silicon; CategoryDiscrete semiconductor The transistor; File Size58KB，4 Pages; ManufacturerBourns; Websitehttp://www.bourns.com

Download Datasheet Parametric Compare View All

BD244A Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	BD244A	-	-	View	Buy Now

BD244A Overview

Bipolar Transistors - BJT 65W PNP Silicon

BD244A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Bourns
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	65 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

BD244, BD244A, BD244B, BD244C

PNP SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD243 Series

65 W at 25°C Case Temperature

6 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

BD244

Collector-emitter voltage (R

= 100

Ω)

BD244A

BD244B

BD244C

BD244

Collector-emitter voltage (I

= -30 mA)

BD244A

BD244B

BD244C

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1.

EBO

tot

½LI

stg

CEO

CER

SYMBOL

VALUE

-55

-70

-90

-115

-45

-60

-80

-100

-5

-6

-10

-3

62.5

-65 to +150

250

°C

UNIT

This value applies for t

≤

0.3 ms, duty cycle

≤

10%.

Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= -0.4 A, R

= 100

Ω,

BE(off)

= 0, R

= 0.1

Ω,

= -20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOITAMROFNI

TCUDORP

BD244A Related Products

	BD244A	BD244-S	BD244B-S	BD244	BD244C-S
Description	Bipolar Transistors - BJT 65W PNP Silicon	Bipolar Transistors - BJT 45V 6A PNP	Bipolar Transistors - BJT 80V 6A PNP	Bipolar Transistors - BJT 65W PNP Silicon	Bipolar Transistors - BJT 100V 6A PNP
Is it Rohs certified?	incompatible	conform to	conform to	incompatible	conform to
Maker	Bourns	Bourns	Bourns	Bourns	Bourns
Reach Compliance Code	unknown	not_compliant	unknown	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	6 A	6 A	6 A	6 A	6 A
Configuration	SINGLE	SINGLE	Single	SINGLE	Single
Minimum DC current gain (hFE)	15	15	15	15	15
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	65 W	65 W	65 W	65 W	65 W
surface mount	NO	NO	NO	NO	NO
Is it lead-free?	Contains lead	Lead free	-	Contains lead	-
Parts packaging code	TO-220AB	TO-220AB	-	TO-220AB	-
package instruction	FLANGE MOUNT, R-PSFM-T3	PLASTIC, TO-220, FM-3	-	FLANGE MOUNT, R-PSFM-T3	-
Contacts	3	3	-	3	-
Shell connection	COLLECTOR	COLLECTOR	-	COLLECTOR	-
Collector-emitter maximum voltage	60 V	45 V	-	45 V	-
JEDEC-95 code	TO-220AB	TO-220AB	-	TO-220AB	-
JESD-30 code	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	-
Number of components	1	1	-	1	-
Number of terminals	3	3	-	3	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-
Package form	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-
Certification status	Not Qualified	Not Qualified	-	Not Qualified	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	-	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	-
Transistor component materials	SILICON	SILICON	-	SILICON	-

Recommended Resources

Music IC as a delay light controller circuit

Solid state relay automatic voltage regulator circuit

Tianyuan YJ type 40W emergency fluorescent lamp circuit diagram

A radio that fits inside a hat

555 high stability switching voltage stabilized power supply circuit

Circuit Diagram: Samsung CE959 Microwave Oven_Page_1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components