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BD244-S

Description
Bipolar Transistors - BJT 45V 6A PNP
CategoryDiscrete semiconductor    The transistor   
File Size58KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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BD244-S Overview

Bipolar Transistors - BJT 45V 6A PNP

BD244-S Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerBourns
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220, FM-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)65 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD243 Series
65 W at 25°C Case Temperature
6 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD244
Collector-emitter voltage (R
BE
= 100
Ω)
BD244A
BD244B
BD244C
BD244
Collector-emitter voltage (I
C
= -30 mA)
BD244A
BD244B
BD244C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-6
-10
-3
65
2
62.5
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD244-S Related Products

BD244-S BD244B-S BD244A BD244 BD244C-S
Description Bipolar Transistors - BJT 45V 6A PNP Bipolar Transistors - BJT 80V 6A PNP Bipolar Transistors - BJT 65W PNP Silicon Bipolar Transistors - BJT 65W PNP Silicon Bipolar Transistors - BJT 100V 6A PNP
Is it Rohs certified? conform to conform to incompatible incompatible conform to
Maker Bourns Bourns Bourns Bourns Bourns
Reach Compliance Code not_compliant unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 6 A 6 A 6 A 6 A 6 A
Configuration SINGLE Single SINGLE SINGLE Single
Minimum DC current gain (hFE) 15 15 15 15 15
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 65 W 65 W 65 W 65 W 65 W
surface mount NO NO NO NO NO
Is it lead-free? Lead free - Contains lead Contains lead -
Parts packaging code TO-220AB - TO-220AB TO-220AB -
package instruction PLASTIC, TO-220, FM-3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts 3 - 3 3 -
Shell connection COLLECTOR - COLLECTOR COLLECTOR -
Collector-emitter maximum voltage 45 V - 60 V 45 V -
JEDEC-95 code TO-220AB - TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 -
Number of components 1 - 1 1 -
Number of terminals 3 - 3 3 -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified - Not Qualified Not Qualified -
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE - SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING - SWITCHING SWITCHING -
Transistor component materials SILICON - SILICON SILICON -
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