NE960R275 datasheet, PDF - EEWORLD Datasheet

NE960R275: DescriptionRF JFET Transistors X KU Band MESFET; Categorysemiconductor Discrete semiconductor; File Size2MB，14 Pages; ManufacturerCEL; Websitehttp://www.cel.com/

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RF JFET Transistors X KU Band MESFET

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	CEL
Product Category	RF JFET Transistors
RoHS	N
Transistor Type	MESFET
Technology	GaAs
Gain	10 dB
Vds - Drain-Source Breakdown Voltage	15 V
Vgs - Gate-Source Breakdown Voltage	- 7 V
Id - Continuous Drain Current	350 mA
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	2.5 W
Mounting Style	Screw
Package / Case	Outline75
Operating Frequency	14.5 GHz
Product	RF JFET
Type	GaAs MESFET
P1dB - Compression Point	25 dBm

	NE960R275	NE94433-T1B-T44-A	NE960R575
Description	RF JFET Transistors X KU Band MESFET	RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor	MOSFET X KU Band MESFET
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	CEL	CEL	CEL
Product Category	RF JFET Transistors	RF Bipolar Transistors	MOSFET
RoHS	N	Details	N
Technology	GaAs	Si	Si
Transistor Type	MESFET	Bipolar	-
Vds - Drain-Source Breakdown Voltage	15 V	-	15 V
Id - Continuous Drain Current	350 mA	-	600 mA
Pd - Power Dissipation	2.5 W	-	3 W
Mounting Style	Screw	-	SMD/SMT
Package / Case	Outline75	-	Minimold-4
Type	GaAs MESFET	RF Bipolar Small Signal	-

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