NE960R575 datasheet, PDF - EEWORLD Datasheet

NE960R575: DescriptionMOSFET X KU Band MESFET; Categorysemiconductor Discrete semiconductor; File Size2MB，14 Pages; ManufacturerCEL; Websitehttp://www.cel.com/

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MOSFET X KU Band MESFET

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	CEL
Product Category	MOSFET
RoHS	N
Technology	Si
Mounting Style	SMD/SMT
Package / Case	Minimold-4
Vds - Drain-Source Breakdown Voltage	15 V
Id - Continuous Drain Current	600 mA
Vgs - Gate-Source Voltage	- 7 V
Pd - Power Dissipation	3 W
Packaging	Bulk

	NE960R575	NE94433-T1B-T44-A	NE960R275
Description	MOSFET X KU Band MESFET	RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor	RF JFET Transistors X KU Band MESFET
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	CEL	CEL	CEL
Product Category	MOSFET	RF Bipolar Transistors	RF JFET Transistors
RoHS	N	Details	N
Technology	Si	Si	GaAs
Mounting Style	SMD/SMT	-	Screw
Package / Case	Minimold-4	-	Outline75
Vds - Drain-Source Breakdown Voltage	15 V	-	15 V
Id - Continuous Drain Current	600 mA	-	350 mA
Pd - Power Dissipation	3 W	-	2.5 W
Transistor Type	-	Bipolar	MESFET
Type	-	RF Bipolar Small Signal	GaAs MESFET

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