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NJVMJD42CT4G

Description
Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size83KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NJVMJD42CT4G Overview

Bipolar Transistors - BJT SILICON Pwr TRANSISTOR

NJVMJD42CT4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instruction,
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time4 weeks
Maximum collector current (IC)6 A
ConfigurationSingle
Minimum DC current gain (hFE)15
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountYES
Terminal surfaceTin (Sn)
Nominal transition frequency (fT)3 MHz

NJVMJD42CT4G Related Products

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Description Bipolar Transistors - BJT SILICON Pwr TRANSISTOR Bipolar Transistors - BJT 6A 100V 20W PNP Bipolar Transistors - BJT 6A 100V 20W PNP Bipolar Transistors - BJT 6A 100V 20W NPN Bipolar Transistors - BJT 6A 100V 20W PNP
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
package instruction , ROHS COMPLIANT, PLASTIC, CASE 369D-01, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts 3 4 3 3 3
Manufacturer packaging code 369C 369 369C 369C 369C
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 4 weeks 1 week 1 week 10 weeks 6 weeks
Maximum collector current (IC) 6 A 6 A 6 A 6 A 6 A
Configuration Single SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15 15
JESD-609 code e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP NPN PNP
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W
surface mount YES NO YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz 3 MHz 3 MHz
Shell connection - COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Collector-emitter maximum voltage - 100 V 100 V 100 V 100 V
JESD-30 code - R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components - 1 1 1 1
Number of terminals - 3 2 2 2
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 260 260
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal form - THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - 40 40 40 40
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON
Base Number Matches - 1 1 1 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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