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MJD42CG

Description
Bipolar Transistors - BJT 6A 100V 20W PNP
CategoryDiscrete semiconductor    The transistor   
File Size83KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJD42CG Overview

Bipolar Transistors - BJT 6A 100V 20W PNP

MJD42CG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1

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Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
package instruction ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369D-01, DPAK-3 , ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts 3 4 3 3 3
Manufacturer packaging code 369C 369 369C 369C 369C
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 4 weeks 10 weeks 6 weeks
Maximum collector current (IC) 6 A 6 A 6 A 6 A 6 A
Configuration SINGLE SINGLE Single SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15 15
JESD-609 code e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP NPN PNP
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W
surface mount YES NO YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz 3 MHz 3 MHz
Shell connection COLLECTOR COLLECTOR - COLLECTOR COLLECTOR
Collector-emitter maximum voltage 100 V 100 V - 100 V 100 V
JESD-30 code R-PSSO-G2 R-PSIP-T3 - R-PSSO-G2 R-PSSO-G2
Number of components 1 1 - 1 1
Number of terminals 2 3 - 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 - 260 260
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
Terminal form GULL WING THROUGH-HOLE - GULL WING GULL WING
Terminal location SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 - 40 40
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
Base Number Matches 1 1 - 1 1

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