IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode
IKW50N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOP
TM
technologyoffering
•verylowV
CEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
C
G
E
KeyPerformanceandPackageParameters
Type
IKW50N60H3
V
CE
600V
I
C
50A
V
CEsat
,T
vj
=25°C
1.85V
T
vjmax
175°C
Marking
K50H603
Package
PG-TO247-3
2
Rev.2.2,2014-03-12
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.2,2014-03-12
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
Turn off safe operating area
V
CE
≤600V,T
vj
≤175°C,t
p
=1µs
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
Short circuit withstand time
V
GE
=15.0V,V
CC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=150°C
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Max.Value
Unit
M
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
100.0
50.0
200.0
200.0
60.0
30.0
200.0
±20
Unit
V
A
A
A
A
A
V
t
SC
5
P
tot
T
vj
T
stg
333.0
167.0
-40...+175
-55...+150
260
0.6
µs
W
°C
°C
°C
Nm
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.45
1.05
40
K/W
K/W
K/W
4
Rev.2.2,2014-03-12
IKW50N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=2.00mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=50.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
V
GE
=0V,I
F
=30.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
I
C
=0.80mA,V
CE
=V
GE
V
CE
=600V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=50.0A
600
-
-
-
-
-
-
4.1
-
-
-
-
-
1.85
2.10
2.25
1.65
1.67
1.65
5.1
-
-
-
30.0
-
2.30
-
-
2.05
-
-
5.7
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
40.0 µA
3500.0
100
-
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
GE
=15.0V,V
CC
≤400V,
t
SC
≤5µs
T
vj
=150°C
V
CC
=480V,I
C
=50.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
2960
116
96
315.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
Short circuit collector current
Max. 1000 short circuits
I
C(SC)
Time between short circuits:
≥
1.0s
-
330
-
A
5
Rev.2.2,2014-03-12
Switching Power Supply Study Group
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