The DG211B, DG212B analog switches are highly improved
versions of the industry-standard DG211, DG212. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG211B and DG212B
can handle up to ± 22 V, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (see Truth Table.)
FEATURES
•
•
•
•
•
•
•
± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - R
DS(on)
: 50
Low leakage - I
D(on)
: 20 pA
Single supply operation possible
Extended temperature range
Fast switching - t
ON
: 120 ns
•
Low charge injection - Q: 1 pC
BENEFITS
•
Wide analog signal range
•
•
•
•
•
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG211, DG212
•
Space savings (TSSOP)
APPLICATIONS
•
•
•
•
•
•
•
Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG211B
Dual-In-Line, SOIC and TSSOP
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
TRUTH TABLE
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
DG211B
ON
OFF
DG212B
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
1
DG211B, DG212B
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
16-Pin Plastic DIP
Standard Part Number
DG211BDJ
DG212BDJ
DG211BDY
DG211BDY-T1
DG212BDY
DG212BDY-T1
DG211BDQ
DG211BDQ-T1
DG212BDQ
DG212BDQ-T1
Lead (Pb)-free Part Number
DG211BDJ-E3
DG212BDJ-E3
DG211BDY-E3
DG211BDY-T1-E3
DG212BDY-E3
DG212BDY-T1-E3
DG211BDQ-E3
DG211BDQ-T1-E3
DG212BDQ-E3
DG212BDQ-T1-E3
16-Pin Narrow SOIC
- 40 °C to 85 °C
16-Pin TSSOP
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Voltages Referenced, V+ to V-
GND
Digital
Inputs
a
,
V
S
, V
D
Limit
44
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 125
16-Pin Plastic DIP
c
Unit
V
Current (Any terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)
Storage Temperature
Power Dissipation (Package)
b
16-Pin Narrow SOIC and TSSOP
d
mA
°C
mW
470
640
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
SCHEMATIC DIAGRAM
(Typical Channel)
V+
S
X
V
L
Level
Shift/
Drive
IN
X
V-
V+
D
X
GND
V-
Figure 1.
www.vishay.com
2
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
DG211B, DG212B
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
D Suffix
- 40 °C to 85 °C
Temp.
a
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
V
INH
or V
INL
Full
Room
V
S
= 10 V
see figure 2
C
L
= 1000 pF, V
gen
= 0 V, R
gen
= 0
V
S
= 0 V, f = 1 MHz
V
D
= V
S
= 0 V, f = 1 MHz
C
L
= 15 pF, R
L
= 50
V
S
= 1 V
RMS
, f = 100 kHz
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Room
Full
Room
Full
Full
1
5
5
16
90
95
10
50
- 10
- 50
10
50
± 4.5
± 22
V
µA
dB
pF
-1
5
300
200
Min.
b
- 15
45
2
- 0.5
-5
- 0.5
-5
- 0.5
- 10
2.4
0.8
1
± 0.01
± 0.01
± 0.02
0.5
5
0.5
5
0.5
10
Typ.
c
Max.
b
15
85
100
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source
On-Resistance
R
DS(on)
Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
INH
V
INL
I
INH
or I
INL
C
IN
t
ON
t
OFF
Q
C
S(off)
C
D(off)
C
D(on)
OIRR
X
TALK
I+
V
D
= ± 10 V, I
S
= 1 mA
V
S
= ± 14 V, V
D
= ± 14 V
V
D
= ± 14 V, V
S
= ± 14 V
V
S
= V
D
= ± 14 V
nA
V
µA
pF
ns
pC
V
IN
= 0 or 5 V
I-
I
L
V
OP
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
3
DG211B, DG212B
Vishay Siliconix
SPECIFICATIONS
(for Single Supply)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
D Suffix
- 40 °C to 85 °C
Temp.
a
Full
Room
Full
Room
Room
Room
Room
Full
Room
Full
Room
Full
Full
4
10
50
- 10
- 50
10
50
+ 4.5
+ 25
V
µA
Min.
b
0
90
Typ.
c
Max.
b
12
160
200
300
200
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
Symbol
V
ANALOG
R
DS(on)
t
ON
t
OFF
Q
V
D
= 3 V, 8 V, I
S
= 1 mA
V
S
= 8 V
see figure 1
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
ns
pC
I+
V
IN
= 0 or 5 V
I-
I
L
V
OP
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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