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SB1020CT_10

Description
10 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB1020CT_10 Overview

10 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB

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SB1020CT~SB1060CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.50(12.7)MIN.
0.624(15.87)
0.548(13.93)
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
20 to 60 Volts
CURRENT
10 Amperes
• Low power loss, high efficiency.
• In compliance with EU RoHS 2002/95/EC directives
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
MECHANCAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.100(2.54)
0.100(2.54)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi m um R e c ur re nt P e a k R e ve r s e Vo lta g e
Ma xi m um R MS Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve r a g e F o rwa r d C urre nt
.3 7 5 " (9 .5 m m) le a d le ng th a t T
C
= 7 5
O
C
P e a k F o r wa rd S ur g e C ur re nt : 8 .3 ms s i ng le
ha lf s i ne - wa ve s up e r i mp o s e d o n ra te d lo a d
( J E D E C me tho d )
Ma xi m um F o r wa rd Vo lta g e a t 5 A p e r le g
Ma xi m um D C Re ve r s e C urr e nt a t
Ra te d D C B lo c k i ng Vo lta g e
Typ i c a l The rm a l R e s i s ta nce
Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e
Ra ng e
T
A
= 2 5
O
C
T
A
= 1 0 0
O
C
S YM B OL
S B 1 0 2 0 C T S B 1 0 3 0 C T S B 1 0 4 0 C T S B 1 0 4 5 C T S B 1 0 5 0 C T S B 1 0 6 0 C T
V
RRM
V
RM S
V
DC
I
F ( AV )
I
F S M
V
F
I
R
R
J
C
T
J
,T
S TG
0 .5 5
0 .2
50
3 .0
- 5 0 to + 1 2 5
O
0.177(4.5)
MAX.
UNITS
V
V
V
A
20
14
20
30
21
30
40
28
40
10
45
3 1 .5
45
50
35
50
60
42
60
150
A
0 .7 5
V
mA
C / W
O
C
NOTE:
Both Bonding and Chip structure are available.
September 2,2010-REV.04
PAGE . 1
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