B613F-2T datasheet, PDF - EEWORLD Datasheet

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B613F-2T: DescriptionDiscrete Semiconductor Modules MOD DIODE SCR 42.5A 280V .250inQC; Categorysemiconductor Discrete semiconductor; File Size705KB，4 Pages; ManufacturerSensata; Environmental Compliance

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B613F-2T Overview

Discrete Semiconductor Modules MOD DIODE SCR 42.5A 280V .250inQC

B613F-2T Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Sensata
Product Category	Discrete Semiconductor Modules
RoHS	Details
Product	Diode Power Modules
Type	SCR / Diode Module
Vf - Forward Voltage	1.65 V
Vr - Reverse Voltage	280 V
Mounting Style	Screw
Package / Case	B-2T
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Configuration	Series Connection - SCR, Diode
Output Current	42.5 A
Gate Trigger Current - Igt	80 mA
Factory Pack Quantity	10
Unit Weight	1.499143 oz

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DataSheet

B-2T, B-2 Series

•

Eight Circuits to Choose from

•

For AC or DC Variable Voltage Output Up to 15KW

•

UL Recognized E72445

Power Modules

AVAILABLE OPTIONS

Circuit Type

1 2 3 4

5 6 7 8

(see schematic

diagrams)

Free Wheeling Diode

Blank:

Not Included

Included

(For circuits 1 & 2 only)

Case Style

-2T:

Standard

-2:

With Isolation Barriers

Series

Current

25 Amps

42.5 Amps

AC Line Voltage

120 VAC

240 VAC

280 VAC

480 VAC

-2T

External Suppressor

Blank:

Not included

SE:

Included

(-2T only, Circuits 1-6 only)

Required for valid part number

For options only and not required for valid part number

Note: Not all combinations available

ELECTRICAL SPECIFICATIONS

Symbol

Maximum DC Output Current (Tc = 85°C)

Maximum Voltage Drop @ Amps Peak

Operating Junction Temperature Range

Critical Rate of Rise of On-State Current @ TJ=125°C

Critical Rate of Rise of Off-State Voltage [V/ s]

AC Line Input Voltage (Repetitive Peak Reverse Voltage)

Maximum Non-Repetitive Surge Current (1/2 Cycle, 60 Hz)

Maximum I²T for Fusing (t=8.3ms) [A²sec]

Minimum Required Gate Current to Trigger @ 25°C

Minimum Required Gate Voltage to Trigger @ 25°C

Average Gate Power

Maximum Peak Reverse Gate Voltage

Maximum Thermal Resistance, Junction to Ceramic Base per Chip

Isolation Voltage

di/dt

dv/dt

RMS

TSM

G(AV)

ISOL

25A

1.65V @ 25A

-40 - 125°C

100A/ s

500V/ s

120 (400V

RMS

)

240 (400V

RMS

)

280 (400V

RMS

)

480 (400V

RMS

)

250A

260

60mA

2.5V

0.5W

5.0V

0.9°C/W

2500 Vrms

42.5A

1.65V @ 42.5A

-40 - 125°C

100A/ s

500V/ s

100 (400V

RMS

)

240 (400V

RMS

)

280 (400V

RMS

)

480 (400V

RMS

)

600A

1500

80mA

3.0V

0.5W

5.0V

0.7°C/W

2500 Vrms

GENERAL SPECIFICATIONS

Description

Weight (typical)

Parameters

1.5 oz (42.5g)

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