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IXSN35N120AU1

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size98KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXSN35N120AU1 Overview

IGBT

IXSN35N120AU1 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeINSULATED GATE BIPOLAR
High Voltage
IGBT with Diode
IXSN 35N120AU1
V
CES
I
C25
V
CE(sat)
3
2
= 1200 V
= 70 A
= 4V
4
1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
P
D
V
ISOL
T
J
T
JM
T
stg
M
d
Weight
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
W
Clamped inductive load, L = 30
mH
V
GE
= 15 V, V
CE
= 0.6 • V
CES
, T
J
= 125°C
R
G
= 22
W,
non repetitive
T
C
= 25°C
50/60 Hz
I
ISOL
£
1 mA
IGBT
Diode
t = 1 min
t=1s
Maximum Ratings
1200
1200
±20
±30
70
35
140
I
CM
= 70
@ 0.8 V
CES
10
300
175
2500
3000
-55 ... +150
150
-55 ... +150
V
A
V
V
A
A
A
A
ms
W
W
V~
V~
°C
°C
°C
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter
,
2 = Gate,
3 = Collector
4 = Emitter


Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
q
q
q
q
q
q
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
q
International standard package
miniBLOC (ISOTOP) compatible
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low V
CE(sat)
- for minimum on-state conduction
losses
Fast Recovery Epitaxial Diode
- short t
rr
and I
RM
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
4
T
J
= 25°C
T
J
= 125°C
8
750
15
±100
4
V
V
mA
mA
nA
Applications
q
q
BV
CES
V
GE(th)
I
CES
ÿ

I
GES
V
CE(sat)
I
C
I
C
= 5 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
q
q
q
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
q
V
q
q
Space savings
Easy to mount with 2 screws
High power density
‚
Device must be heat sunk during high temperature leackage test to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
92519E (12/96)
© 2000 IXYS All rights reserved
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