HM51S4260ATT-8 datasheet, PDF - EEWORLD Datasheet

HM51S4260ATT-8: Description262, 144-Word x 16-Bit Dynamic Random Access Memory; Categorystorage storage; File Size1MB，21 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM51S4260ATT-8 Overview

262, 144-Word x 16-Bit Dynamic Random Access Memory

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP40/44,.46,32
Contacts	40
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
access mode	FAST PAGE
Maximum access time	80 ns
Other features	RAS ONLY; CAS BEFORE RAS; SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
length	18.41 mm
memory density	4194304 bi
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP40/44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	1.2 mm
self refresh	YES
Maximum standby current	0.001 A
Maximum slew rate	0.14 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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