HY29F040AT-12 datasheet, PDF - EEWORLD Datasheet

HY29F040AT-12: Description512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory; Categorystorage storage; File Size196KB，40 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY29F040AT-12 Overview

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	120 ns
Other features	MINIMUM 100000 PROGRAM/ERASE CYCLES
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e6
length	18.4 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Department size	64K
Maximum standby current	0.001 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE
width	8 mm

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