FQD4P40TF datasheet, PDF - EEWORLD Datasheet

FQD4P40TF: DescriptionMOSFET 400V P-Ch QFET; Categorysemiconductor Discrete semiconductor; File Size397KB，2 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MOSFET 400V P-Ch QFET

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 400 V
Id - Continuous Drain Current	- 2.7 A
Rds On - Drain-Source Resistance	3.1 Ohms
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	Reel
Height	2.39 mm
Length	6.73 mm
Transistor Type	1 P-Channel
Width	6.22 mm
Fall Time	37 ns
Rise Time	55 ns
Factory Pack Quantity	2000
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	13 ns
Unit Weight	0.139332 oz

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