Changes to Normalized 1/f Noise Parameter, Table 1 ................. 4
11/11—Rev. 0 to Rev. A
Changes to Figure 28 ...................................................................... 23
10/11—Revision 0: Initial Version
Rev. B | Page 2 of 28
Data Sheet
SPECIFICATIONS
ADF4151
AV
DD
= DV
DD
= SD
VDD
= 3.3 V ± 10%; V
P
= AV
DD
to 5.5 V; A
GND
= D
GND
= 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted. Operating
temperature range is −40°C to +85°C.
Table 1.
Parameter
REF
IN
CHARACTERISTICS
Input Frequency
Input Sensitivity
Input Capacitance
Input Current
RF INPUT CHARACTERISTICS
RF Input Frequency (RF
IN
)
Prescaler Output Frequency
MAXIMUM PFD FREQUENCY
Fractional-N Mode
Low Spur Mode
Low Noise Mode
Integer-N Mode
CHARGE PUMP
I
CP
Sink/Source
High Value
Low Value
R
SET
Range
I
CP
Leakage
Sink and Source Matching
I
CP
vs. V
CP
I
CP
vs. Temperature
LOGIC INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INH
/I
INL
Input Capacitance, C
IN
LOGIC OUTPUTS
Output High Voltage, V
OH
Output High Current, I
OH
Output Low Voltage, V
O
POWER SUPPLIES
AV
DD
DV
DD
, SD
VDD
V
P
DI
DD
+ AI
DD 2
V
P
I
DD2
Low Power Sleep Mode
Min
10
0.7
10
±60
0.5
3.5
750
B Version
Typ
Max
250
AV
DD
Unit
MHz
V p-p
pF
µA
GHz
MHz
Conditions/Comments
For f < 10 MHz, ensure slew rate > 21 V/µs
Biased at AV
DD
/2
1
For lower frequencies, ensure slew rate > 400 V/µs
−10 dBm ≤ RF input power ≤ +5 dBm
26
32
32
MHz
MHz
MHz
R
SET
= 5.1 kΩ
4.5
0.281
2.7
1
2
1.5
2
1.5
0.6
±1
5.0
DV
DD
− 0.4
500
0.4
3.0
AV
DD
AV
DD
40
2
1
5.5
50
3.6
10
mA
mA
kΩ
nA
%
%
%
V
V
µA
pF
V
µA
V
V
V
mA
mA
µA
V
CP
= V
P
/2
0.5 V ≤ V
CP
≤ V
P
− 0.5 V
0.5 V ≤ V
CP
≤ V
P
− 0.5 V
V
CP
= V
P
/2
CMOS output chosen
I
OL
= 500 µA
V
P
= 5 V
Rev. B | Page 3 of 28
ADF4151
Parameter
NOISE CHARACTERISTICS
Normalized In-Band Phase Noise
Floor (PN
SYNTH
)
3
Normalized 1/f Noise (PN
1_f
)
4
Normalized In-Band Phase Noise
Floor (PN
SYNTH
)
3
Normalized 1/f Noise (PN
1_f
)
4
Spurious Signals Due to PFD
Frequency
5
1
2
Data Sheet
Min
B Version
Typ
−221
−118
−220
−115
−107
Max
Unit
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc
Conditions/Comments
PLL loop BW = 500 kHz (ABP = 3 ns)
10 kHz offset. Normalized to 1 GHz (ABP = 3 ns)
PLL loop BW = 500 kHz (ABP = 6 ns);
low noise mode
10 kHz offset; normalized to 1 GHz (ABP = 6 ns);
low noise mode
PFD = 25 MHz
AC coupling ensures AV
DD
/2 bias.
T
A
= 25°C; AV
DD
= DV
DD
= 3.6 V; prescaler = 4/5; f
REFIN
= 130 MHz; f
PFD
= 26 MHz; f
RF
= 1.742 GHz.
3
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value) and 10 log F
PFD
. PN
SYNTH
= PN
TOT
– 10 log f
PFD
– 20 log N
4
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency (f
RF
)
and at a frequency offset (f) is given by PN = P
1_f
+ 10 log(10 kHz/f) + 20 log(f
RF
/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL
5
Spurious measured on EVAL-ADF4151EB1Z with RF buffer between VCO output and RF input by-passed, using a Rohde & Schwarz FSUP signal source analyzer.