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KIA4N60P

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power consumption Dispersed (Ta=25°C): 93W (Tc) Type: N channel N channel, 600V, 4A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size321KB,6 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
Download Datasheet Parametric View All

KIA4N60P Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power consumption Dispersed (Ta=25°C): 93W (Tc) Type: N channel N channel, 600V, 4A

KIA4N60P Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C4A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2.7Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)93W(Tc)
typeN channel

KIA4N60P Preview

Download Datasheet
KIA
SEMICONDUCTORS
4.0A 600V
N-CHANNEL MOSFET
4N60H
1.Description
The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2.
Features
n
n
n
n
n
n
R
DS(ON)
=2.3Ω@ V
GS
=10V
Low gate charge (typical 13.5nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.2 Dec 2014
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