DDTB113EU-7 datasheet, PDF - EEWORLD Datasheet

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DDTB113EU-7: DescriptionBipolar Transistors - Pre-Biased 200MW 1KW 1KW; CategoryDiscrete semiconductor The transistor; File Size69KB，3 Pages; ManufacturerDiodes Incorporated

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DDTB113EU-7 Overview

Bipolar Transistors - Pre-Biased 200MW 1KW 1KW

DDTB113EU-7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	33
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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DDTB (xxxx) U

PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Complementary NPN Types Available (DDTD)

Built-In Biasing Resistors, R1, R2

Lead Free/RoHS Compliant (Note 2)

"Green" Device (Note 3 and 4)

SOT-323

Dim

B C

Min

0.25

1.15

2.00

0.30

1.20

1.80

0.0

0.90

0.25

0.10

0°

Max

0.40

1.35

2.20

0.40

1.40

2.20

0.10

1.00

0.40

0.18

8°

NEW P R OD UCT

UC T

Mechanical Data

•

Case: SOT-323

Case Material: Molded Plastic, "Green" Molding

Compound, Note 4. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

Marking Code & Date Code Information: See Table

Below & Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

P/N

DDTB113EU

DDTB123EU

DDTB143EU

DDTB114EU

DDTB122JU

DDTB113ZU

DDTB123YU

DDTB133HU

DDTB123TU

DDTB143TU

DDTB114TU

DDTB114GU

R1 (NOM)

2.2K

4.7K

10K

0.22K

2.2K

3.3K

2.2K

4.7K

10K

R2 (NOM)

2.2K

4.7K

10K

4.7K

10K

OPEN

10K

Type Code

P60

P61

P62

P63

P64

P65

P66

P67

P69

P70

P71

P72

0.65 Nominal

•

All Dimensions in mm

OUT

GND(+)

Schematic and Pin Configuration

Maximum Ratings

Supply Voltage, (3) to (2)

Input Voltage, (1) to (2)

= 25°C unless otherwise specified

Symbol

DDTB113EU

DDTB123EU

DDTB143EU

DDTB114EU

DDTB122JU

DDTB113ZU

DDTB123YU

DDTB133HU

DDTB123TU

DDTB143TU

DDTB114TU

DDTB114GU

All

Value

-50

+10 to -10

+10 to -12

+10 to -30

+10 to -40

+5 to -5

+5 to -10

+5 to -12

+6 to -20

-5

-500

200

625

-55 to +150

Unit

Characteristic

Input Voltage, (2) to (1)

EBO (MAX)

, T

STG

°C/W

°C

Output Current

Power Dissipation

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

Notes:

Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

No purposefully added lead.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to

Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30383 Rev. 6 - 2

1 of 3

www.diodes.com

DDTD (xxxx) U

DDTB113EU-7 Related Products

	DDTB113EU-7	DDTB114GU-7	DDTB114TU-7	DDTB113ZU-7	DDTB122JU-7
Description	Bipolar Transistors - Pre-Biased 200MW 1KW 1KW	Bipolar Transistors - Pre-Biased 200MW 10KW	Bipolar Transistors - Pre-Biased 200MW 10KW	Bipolar Transistors - Pre-Biased 200MW 1KW 10KW	Bipolar Transistors - Pre-Biased 200MW 0.22KW 4.7KW 3K
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 1	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR RATIO 10	BUILT IN BIAS RESISTOR RATIO 21.364
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	40 V	40 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	33	56	100	56	47
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0	e0
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	235	235	235	235	235
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	10	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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