MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6650V
650VCoolMOS™C6PowerTransistor
IPD65R950C6
DataSheet
Rev.2.0
Final
Industrial&Multimarket
650VCoolMOS™C6PowerTransistor
IPD65R950C6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
DPAK
tab
1
2
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Applications
HardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.
PCSilverbox,Adapter,LCD&PDPTVandLighting.
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
Type/OrderingCode
IPD65R950C6
Value
700
0.95
15.3
12
1.5
500
Package
PG-TO 252
Unit
V
Ω
nC
A
µJ
A/µs
Marking
65C6950
RelatedLinks
see Appendix A
Final Data Sheet
2
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R950C6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R950C6
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Operating and storage temperature
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
3)
Maximum diode commutation speed
Power dissipation
Symbol
I
D
I
D
‚
pulse
E
AS
E
AR
I
AR
dv/dt
V
GS
T
j
‚T
stg
I
S
I
S
‚
pulse
dv/dt
di
f
/dt
P
tot
-20
-30
-55
Values
Min.
Typ.
Max.
4.5
2.8
12
50
0.15
1.0
50
20
30
150
3.9
12
15
500
37
°C
A
A
V/ns
A/µs
W
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
≤I
D
,
T
j
=25°C
(see table 8)
T
C
=25°
A
mJ
mJ
A
V/ns
V
V
DS
=0...480V
static
AC (f > 1 Hz)
Unit
A
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=1.0A,V
DD
=50V
(see table 10)
I
D
=1.0A,V
DD
=50V
1)
2)
Limited by T
j max
. Maximum duty cycle D=0.75
Pulse width t
p
limited by T
j max
3)
Identical low side and high side switch with identical R
G
Final Data Sheet
4
Rev.2.0,2013-07-26
650VCoolMOS™C6PowerTransistor
IPD65R950C6
3Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
Typ.
Max.
3.4
62
35
Soldering temperature, wave- &
reflowsoldering allowed
T
sold
260
°C
Unit
°C/W
°C/W leaded
SMD version, device on PCB,
6cm² cooling area
1.6 mm (0.063 in.) from case for
10s
Note/TestCondition
Thermal resistance, junction - ambient
1)
R
thJA
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
1)
Final Data Sheet
5
Rev.2.0,2013-07-26
Medical Electronics
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