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GB02SHT03-46

Description
Schottky Diodes & Rectifiers SiC Schottky Diode
Categorysemiconductor    Discrete semiconductor   
File Size375KB,5 Pages
ManufacturerGeneSiC Semiconductor
Environmental Compliance
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GB02SHT03-46 Overview

Schottky Diodes & Rectifiers SiC Schottky Diode

GB02SHT03-46 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerGeneSiC Semiconductor
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Silicon Carbide Diodes
Mounting StyleThrough Hole
Package / CaseTO-46-2
If - Forward Current4 A
Vrrm - Repetitive Reverse Voltage300 V
Vf - Forward Voltage2.6 V
Ifsm - Forward Surge Current10 A
ConfigurationSingle
TechnologySiC
Ir - Reverse Current5 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 225 C
PackagingBulk
Pd - Power Dissipation64 W
Factory Pack Quantity50
 
GB02SHT03-46
 
V
RRM
I
F (Tc=25°C)
Q
C
Package
RoHS Compliant
High Temperature Silicon Carbide
Power Schottky Diode
Features
300 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of V
F
Temperature independent switching behavior
Lowest figure of merit Q
C
/I
F
Available screened to Mil-PRF-19500
=
=
=
300 V
4A
9 nC
1
2
TO – 46
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at T
j
= 210 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
I t value
Power dissipation
Operating and storage temperature
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
2
∫i dt
P
tot
T
j
, T
stg
Conditions
T
C
= 25 °C
T
C
≤ 180 °C
T
C
≤ 180 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C
Values
300
4
2
4
10
65
0.5
64
-55 to 210
Unit
V
A
A
A
A
A
2
AS
W
°C
Electrical Characteristics at T
j
= 210 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 1 A, T
j
= 25 °C
I
F
= 1 A, T
j
= 210 °C
V
R
= 300 V, T
j
= 25 °C
V
R
= 300 V, T
j
= 210 °C
I
F
≤ I
F,MAX
V
R
= 300 V
dI
F
/dt = 200 A/μs
V
R
= 300 V
T
j
= 210 °C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 300 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.6
2.6
1
5
9
< 17
76
15
max.
Unit
V
5
50
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
5.55
°C/W
Mechanical Properties
Mounting torque
M
0.6
Nm
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
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