NTMFS4852NT1G datasheet, PDF - EEWORLD Datasheet

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NTMFS4852NT1G: DescriptionMOSFET NFET SO8FL 30V 155A 2.1MO; CategoryDiscrete semiconductor The transistor; File Size112KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTMFS4852NT1G Overview

MOSFET NFET SO8FL 30V 155A 2.1MO

NTMFS4852NT1G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Parts packaging code	DFN
package instruction	SMALL OUTLINE, R-XDSO-F5
Contacts	5
Manufacturer packaging code	488AA
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	1 week
Avalanche Energy Efficiency Rating (Eas)	360 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	155 A
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.0033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-F5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	86.2 W
Maximum pulsed drain current (IDM)	310 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

NTMFS4852NT1G Related Products

	NTMFS4852NT1G	NTMFS4852NT3G
Description	MOSFET NFET SO8FL 30V 155A 2.1MO	MOSFET NFET SO8FL 30V 155A 2.1MO
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free
Parts packaging code	DFN	DFN
package instruction	SMALL OUTLINE, R-XDSO-F5	6 X 5 MM, LEAD FREE, CASE 488AA-01, SO-8FL, DFN-6
Contacts	5	5
Manufacturer packaging code	488AA	488AA
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Factory Lead Time	1 week	5 weeks
Avalanche Energy Efficiency Rating (Eas)	360 mJ	360 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	155 A	155 A
Maximum drain current (ID)	16 A	16 A
Maximum drain-source on-resistance	0.0033 Ω	0.0033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-F5	R-XDSO-F5
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	5	5
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	86.2 W	86.2 W
Maximum pulsed drain current (IDM)	310 A	310 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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