MOSFET NFET SO8FL 30V 155A 2.1MO
| Parameter Name | Attribute value |
| Brand Name | ON Semiconductor |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | ON Semiconductor |
| Parts packaging code | DFN |
| package instruction | 6 X 5 MM, LEAD FREE, CASE 488AA-01, SO-8FL, DFN-6 |
| Contacts | 5 |
| Manufacturer packaging code | 488AA |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 5 weeks |
| Avalanche Energy Efficiency Rating (Eas) | 360 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 155 A |
| Maximum drain current (ID) | 16 A |
| Maximum drain-source on-resistance | 0.0033 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XDSO-F5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 86.2 W |
| Maximum pulsed drain current (IDM) | 310 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| NTMFS4852NT3G | NTMFS4852NT1G | |
|---|---|---|
| Description | MOSFET NFET SO8FL 30V 155A 2.1MO | MOSFET NFET SO8FL 30V 155A 2.1MO |
| Brand Name | ON Semiconductor | ON Semiconductor |
| Is it lead-free? | Lead free | Lead free |
| Parts packaging code | DFN | DFN |
| package instruction | 6 X 5 MM, LEAD FREE, CASE 488AA-01, SO-8FL, DFN-6 | SMALL OUTLINE, R-XDSO-F5 |
| Contacts | 5 | 5 |
| Manufacturer packaging code | 488AA | 488AA |
| Reach Compliance Code | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 |
| Factory Lead Time | 5 weeks | 1 week |
| Avalanche Energy Efficiency Rating (Eas) | 360 mJ | 360 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V | 30 V |
| Maximum drain current (Abs) (ID) | 155 A | 155 A |
| Maximum drain current (ID) | 16 A | 16 A |
| Maximum drain-source on-resistance | 0.0033 Ω | 0.0033 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XDSO-F5 | R-XDSO-F5 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 5 | 5 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 86.2 W | 86.2 W |
| Maximum pulsed drain current (IDM) | 310 A | 310 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin (Sn) | Tin (Sn) |
| Terminal form | FLAT | FLAT |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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