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MRF6S27015NR1

Description
RF MOSFET Transistors HV6 2.7GHZ 15W
CategoryDiscrete semiconductor    The transistor   
File Size692KB,19 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF6S27015NR1 Overview

RF MOSFET Transistors HV6 2.7GHZ 15W

MRF6S27015NR1 Parametric

Parameter NameAttribute value
Brand NameFreescale
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOF
package instructionROHS COMPLIANT, PLASTIC, TO-270, CASE 1265-09, 2 PIN
Contacts2
Manufacturer packaging codeCASE 1265-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage68 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JEDEC-95 codeTO-270AA
JESD-30 codeR-PDFM-F2
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF6S27015N
Rev. 2, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
160 mA, P
out
= 3 Watts Avg., f = 2600 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF6S27015NR1
MRF6S27015GNR1
2300 - 2700 MHz, 3 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S27015NR1
CASE 1265A - 03, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
Symbol
R
θJC
Value
(2,3)
2.0
2.2
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
MRF6S27015NR1 MRF6S27015GNR1
1
RF Device Data
Freescale Semiconductor

MRF6S27015NR1 Related Products

MRF6S27015NR1 MRF6S27015GNR1
Description RF MOSFET Transistors HV6 2.7GHZ 15W RF MOSFET Transistors HV6 2.7GHZ 15W
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOF TO-270
package instruction ROHS COMPLIANT, PLASTIC, TO-270, CASE 1265-09, 2 PIN SMALL OUTLINE, R-PDSO-G2
Contacts 2 2
Manufacturer packaging code CASE 1265-09 CASE 1265A-03
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 68 V 68 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band S BAND S BAND
JEDEC-95 code TO-270AA TO-270
JESD-30 code R-PDFM-F2 R-PDSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 3 3
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 225 °C 225 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form FLAT GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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