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BSC020N025S G

Description
MOSFET N-Ch 25V 29A TDSON-8
Categorysemiconductor    Discrete semiconductor   
File Size631KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC020N025S G Overview

MOSFET N-Ch 25V 29A TDSON-8

BSC020N025S G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologyGaN
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage25 V
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance2 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Triple Source
Pd - Power Dissipation2.8 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height1.27 mm
Length5.9 mm
Transistor Type1 N-Channel
Width5.15 mm
Fall Time8 ns
Moisture SensitiveYes
Rise Time10 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time47 ns
Typical Turn-On Delay Time10.3 ns
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