2003 datasheet, PDF - EEWORLD Datasheet

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2003: DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size157KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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Suppliers	Part Number	Price	MOQ	In stock
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2003 Overview

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN

2003 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	2121115600
package instruction	HERMETIC SEALED, 55BT, 2 PIN
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Samacsys Manufacturer	Microsemi Corporation
Samacsys Modified On	2020-12-17 16:16:04
YTEOL	0
Other features	HIGH RELIABILITY
Maximum collector current (IC)	0.5 A
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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2003

3 Watt - 28 Volts, Class C

Microwave 2000 MHz

GENERAL DESCRIPTION

The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class

C, RF output power at 2000 MHz. Gold metalization and diffused ballasting

are used to provide high reliability and supreme ruggedness. The transistor is

uses a fully hermetic High Temperature solder Sealed package.

CASE OUTLINE

55BT-1, Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

BVebo

Emitter to Base Voltage

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

12 Watts

50 Volts

3.5 Volts

0.5 A

- 65 to + 200

+ 200

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

Pout

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

TEST CONDITIONS

F = 2000 MHz

Vcb = 28 Volts

Po = 3.0 Watts

As Above

F = 2 GHz, Po = 3 W

MIN

3.0

0.47

8.1

8.5

30:1

TYP

MAX

UNITS

Watt

VSWR

BVces

BVcbo

BVebo

Icbo

Cob

Collector to Emitter Breakdown

Collector to Base Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Output Capacitance

Thermal Resistance

Ic = 10 mA

Ic = 1 mA

Ie = 1.0 mA

Vcb = 28 Volts

3.5

500

5.0

Volts

Vce = 5 V, Ic = 100 mA

F =1 MHz, Vcb = 28 V

C/W

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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