8EWF12S datasheet, PDF - EEWORLD Datasheet

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8EWF12S: Description8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA; CategoryDiscrete semiconductor diode; File Size239KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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8EWF12S Overview

8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA

8EWF12S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	R-PSSO-G2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	FREEWHEELING DIODE
application	FAST SOFT RECOVERY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse current	100 µA
Maximum reverse recovery time	0.27 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Bulletin I2203 03/05

QUIET

Series

8EWF12S

SURFACE MOUNTABLE FAST

SOFT RECOVERY DIODE

Lead-Free ("PbF" suffix)

< 1.3V @ 8A

= 80ns

RRM

= 1200V

Description/ Features

The 8EWF12SPbF fast soft recovery

QUIET

rectifier series has been optimized for combined

short reverse recovery time, low forward voltage

drop and low leakage current

The glass passivation ensures stable reliable

operation in the most severe temperature and

power cycling conditions.

Typical applications are both:

Output rectification and freewheeling diode

in inverters, choppers and converters.

Input rectifications where severe

restrictions on conducted EMI should be met.

Major Ratings and Characteristics

Characteristics

F(AV)

Sinusoidal waveform

RRM

FSM

@ 8 A, T

= 25°C

@ 1A, 100A/µs

range

Package Outline

Units

°C

Values

1200

170

1.3

- 40 to 150

TO-252AA (D-Pak)

www.irf.com

8EWF12S Related Products

	8EWF12S	8EWF12STR	8EWF12STRLPBF	8EWF12STRPBF	8EWF12STRRPBF
Description	8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA	8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA	8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA	8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA	8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
Is it Rohs certified?	incompatible	incompatible	-	conform to	-
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	-
Reach Compliance Code	compli	compli	-	_compli	-
Other features	FREEWHEELING DIODE	FREEWHEELING DIODE	-	FREEWHEELING DIODE	-
application	FAST SOFT RECOVERY	FAST SOFT RECOVERY	-	FAST SOFT RECOVERY	-
Shell connection	CATHODE	CATHODE	-	CATHODE	-
Configuration	SINGLE	SINGLE	-	SINGLE	-
Diode component materials	SILICON	SILICON	-	SILICON	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	-
Maximum forward voltage (VF)	1.3 V	1.3 V	-	1.3 V	-
JEDEC-95 code	TO-252AA	TO-252AA	-	TO-252AA	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	-	R-PSSO-G2	-
JESD-609 code	e0	e0	-	e3	-
Humidity sensitivity level	1	1	-	1	-
Maximum non-repetitive peak forward current	200 A	200 A	-	200 A	-
Number of components	1	1	-	1	-
Phase	1	1	-	1	-
Number of terminals	2	2	-	2	-
Maximum operating temperature	150 °C	150 °C	-	150 °C	-
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C	-
Maximum output current	8 A	8 A	-	8 A	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	260	260	-	260	-
Certification status	Not Qualified	Not Qualified	-	Not Qualified	-
Maximum repetitive peak reverse voltage	1200 V	1200 V	-	1200 V	-
Maximum reverse current	100 µA	100 µA	-	100 µA	-
Maximum reverse recovery time	0.27 µs	0.27 µs	-	0.27 µs	-
surface mount	YES	YES	-	YES	-
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	-	MATTE TIN OVER NICKEL	-
Terminal form	GULL WING	GULL WING	-	GULL WING	-
Terminal location	SINGLE	SINGLE	-	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	30	-
Base Number Matches	1	1	-	1	-

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