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8EWF12STR

Description
8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
CategoryDiscrete semiconductor    diode   
File Size239KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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8EWF12STR Overview

8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA

8EWF12STR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSSO-G2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREEWHEELING DIODE
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current100 µA
Maximum reverse recovery time0.27 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2203 03/05
QUIET
IR
Series
8EWF12S
SURFACE MOUNTABLE FAST
SOFT RECOVERY DIODE
Lead-Free ("PbF" suffix)
V
F
t
rr
< 1.3V @ 8A
= 80ns
V
RRM
= 1200V
Description/ Features
The 8EWF12SPbF fast soft recovery
QUIET
IR
rectifier series has been optimized for combined
short reverse recovery time, low forward voltage
drop and low leakage current
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
Output rectification and freewheeling diode
in inverters, choppers and converters.
Input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
t
rr
T
J
@ 8 A, T
J
= 25°C
@ 1A, 100A/µs
range
Package Outline
Units
A
V
A
V
ns
°C
Values
8
1200
170
1.3
80
- 40 to 150
TO-252AA (D-Pak)
www.irf.com
1

8EWF12STR Related Products

8EWF12STR 8EWF12S 8EWF12STRLPBF 8EWF12STRPBF 8EWF12STRRPBF
Description 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
Is it Rohs certified? incompatible incompatible - conform to -
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) -
Reach Compliance Code compli compli - _compli -
Other features FREEWHEELING DIODE FREEWHEELING DIODE - FREEWHEELING DIODE -
application FAST SOFT RECOVERY FAST SOFT RECOVERY - FAST SOFT RECOVERY -
Shell connection CATHODE CATHODE - CATHODE -
Configuration SINGLE SINGLE - SINGLE -
Diode component materials SILICON SILICON - SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE -
Maximum forward voltage (VF) 1.3 V 1.3 V - 1.3 V -
JEDEC-95 code TO-252AA TO-252AA - TO-252AA -
JESD-30 code R-PSSO-G2 R-PSSO-G2 - R-PSSO-G2 -
JESD-609 code e0 e0 - e3 -
Humidity sensitivity level 1 1 - 1 -
Maximum non-repetitive peak forward current 200 A 200 A - 200 A -
Number of components 1 1 - 1 -
Phase 1 1 - 1 -
Number of terminals 2 2 - 2 -
Maximum operating temperature 150 °C 150 °C - 150 °C -
Minimum operating temperature -40 °C -40 °C - -40 °C -
Maximum output current 8 A 8 A - 8 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 - 260 -
Certification status Not Qualified Not Qualified - Not Qualified -
Maximum repetitive peak reverse voltage 1200 V 1200 V - 1200 V -
Maximum reverse current 100 µA 100 µA - 100 µA -
Maximum reverse recovery time 0.27 µs 0.27 µs - 0.27 µs -
surface mount YES YES - YES -
Terminal surface TIN LEAD Tin/Lead (Sn/Pb) - MATTE TIN OVER NICKEL -
Terminal form GULL WING GULL WING - GULL WING -
Terminal location SINGLE SINGLE - SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - 30 -
Base Number Matches 1 1 - 1 -

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