DS2016
2k x 8 3V/5V Operation
Static RAM
www.maxim-ic.com
FEATURES
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Low-power CMOS design
Standby current
-
50nA max at t
A
= +25°C V
CC
= 3.0V
-
100nA max at t
A
= +25°C V
CC
= 5.5V
-
1µA max at t
A
= +60°C V
CC
= 5.5V
Full operation for V
CC
= 5.5V to 2.7V
Data retention voltage = 5.5V to 2.0V
Fast 5V access time
-
DS2016-100
100ns
Reduced-speed 3V access time
-
DS2016-100
250ns
Operating temperature range of -40°C to
+85°C
Full static operation
TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7V
Available in 24-pin DIP and 24-pin SO
packages
Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
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DS2016 24-Pin DIP (600mil)
DS2016R 24-Pin SO (300mil)
PIN DESCRIPTION
A0 to A10
- Address Inputs
DQ0 to DQ7 - Data Input/Output
CE
- Chip Enable Input
WE
- Write Enable Input
OE
- Output Enable Input
V
CC
- Power Supply Input 2.7V - 5.5V
GND
- Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7V and 5.5V. The chip enable input (
CE
) is used for device
selection and can be used in order to achieve the minimum standby current mode, which facilitates both
battery operated and battery backup applications. The device provides access times as fast as 100ns when
operated from a 5V power supply input and also provides relatively good performance of 250ns access
while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input
voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery
operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM
and is pin-compatible with ROM and EPROM of similar density.
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032706
DS2016
OPERATION MODE
MODE
READ
WRITE
DESELECT
STANDBY
CE
OE
WE
L
L
L
H
L
X
H
X
H
L
H
X
A0-A10
STABLE
STABLE
X
X
DQ-DQ7
DATA OUT
DATA IN
HIGH-Z
HIGH-Z
POWER
I
CCO
I
CCO
I
CCO
I
CCS
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
IN
, V
I/O
T
STG
T
OPR
T
SOLDER
PARAMETER
Power Supply Voltage
Input, Input/Output Voltage
Storage Temperature
Operating Temperature
Soldering Temperature/Time
RATING
-0.3V to +7.0V
-0.3 to V
CC
+0.3V
-55°C to +125°C
-40°C to +85°C
IPC/JEDEC J-STD-020
CAPACITANCE
+25°C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
12
UNITS
pF
pF
(T
A
=
NOTES
+5-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Power Supply Voltage
Input High Voltage
Input Low Voltage
Data Retention Voltage
SYMBOL
V
CC
V
IH
V
IL
V
DR
MIN
4.5
2.0
-0.3
2.0
TYP
5.0
(T
A
= -40°C to +85°C)
MAX
5.5
V
CC
+ 0.3
0.8
5.5
UNITS
V
V
V
V
NOTES
DC CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current
Output High Current
Output Low Current
Standby Current
Standby Current
Standby Current
Operating Current
SYMBOL
I
IL
I
LO
I
OH
I
OL
I
CCS1
I
CCS2
I
CCS2
I
CCO
(T
A
= -40°C to +85°C; V
CC
= 5V ±10%)
CONDITIONS
0V
£
V
IN
£
V
CC
CE
= V
IH
, 0V
£
V
IO
£
V
CC
V
OH
= 2.4V
V
OL
= 0.4V
CE
= 2.0V
CE
³
V
CC
- 0.5V, t
A
=
+60°C
CE
³
V
CC
- 0.5V, t
A
=
+25°C
CE
= 0.8V, 200ns cycle
MIN TYP
MAX
±
0.1
±
0.5
UNITS
µA
µA
mA
mA
mA
µA
nA
mA
-1.0
4.0
0.3
1
100
55
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DS2016
AC CHARACTERISTICS READ CYCLE
PARAMETER
Read Cycle Time
Access Time
OE
to Output Valid
CE
to Output Valid
CE
or
OE
to Output
Active
Output High-Z from
Deselection
Output Hold from
Address Change
SYMBOL
t
RC
t
ACC
t
OE
t
CO
t
COE
t
OD
t
OH
(T
A
= -40°C to +85°C; V
CC
= 5V ±10%)
UNITS
ns
ns
ns
ns
ns
ns
ns
NOTES
DS2016-100
MIN TYP MAX
100
100
50
100
5
5
5
35
AC CHARACTERISTICS WRITE CYCLE
PARAMETER
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery
Time
Output High-Z from
WE
(T
A
= -40°C to +85°C; V
CC
= 5V ±10%)
UNITS
ns
ns
ns
ns
35
ns
ns
ns
ns
NOTES
SYMBOL
t
WC
t
WP
t
AW
t
WR
t
ODW
t
OEW
t
DS
t
DH
DS2016-100
MIN TYP MAX
100
75
0
10
Output Active from
WE
5
40
0
Data Setup Time
Data Hold Time
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
Data Retention Supply
V
DR
Voltage
Data Retention
I
CCR1
Current at 5.5V
Data Retention
I
CCR2
Current at 2.0V
Chip Deselect to Data
t
CDR
Retention
Recovery Time
t
R
* Typical values are at +25°C
CONDITIONS
CE
CE
CE
(T
A
= -40°C to +85°C)
MIN TYP
2.0
0.1*
50*
0
2
MAX
5.5
1
750
UNITS
V
µA
nA
µs
ms
³
V
CC
- 0.5V
³
V
CC
- 0.5V
³
V
CC
- 0.5V
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DS2016
AC CHARACTERISTICS WRITE CYCLE
(T
A
= -40°C to +85°C; V
CC
= 2.7V to 3.5V)
PARAMETER
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from
WE
Output Active from
WE
Data Setup Time
Data Hold Time
SYMBOL
t
WC
t
WP
t
AW
t
WR
t
ODW
t
OEW
t
DS
t
DH
MIN
250
190
0
25
5
100
0
TYP
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
90
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
Data Retention
V
DR
Supply Voltage
Data Retention
I
CCR1
Current at 3.5V
Data Retention
I
CCR2
Current at 2.0V
Chip Deselect to
t
CDR
Data Retention
Recovery Time
t
R
* Typical values are at +25°C
CONDITIONS
CE
CE
CE
(T
A
= -40°C to +85°C)
MIN TYP
2.0
50*
50*
0
2
MAX
3.5
1000
750
UNITS
V
nA
nA
µs
ms
³
V
CC
- 0.3V
³
V
CC
- 0.3V
³
V
CC
- 0.3V
TIMING DIAGRAM: READ CYCLE
SEE NOTE 1
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