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LL4151-GS18

Description
Diodes - General Purpose, Power, Switching 75 Volt 50mA 2.0 Amp IFSM
CategoryDiscrete semiconductor    diode   
File Size86KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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LL4151-GS18 Overview

Diodes - General Purpose, Power, Switching 75 Volt 50mA 2.0 Amp IFSM

LL4151-GS18 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeDO-213AA
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)250
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature40
LL4151
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diodes
• Electrical data identical with the device 1N4151
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case:
MiniMELF (SOD-80)
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5 per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
LL4151
ORDERING CODE
LL4151-GS18 or LL4151-GS08
TYPE MARKING
-
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
Power dissipation
V
R
= 0
t
p
= 1 μs
TEST CONDITION
SYMBOL
V
RRM
V
R
I
FSM
I
FRM
I
F
I
F(AV)
P
tot
VALUE
75
50
2
500
300
150
500
UNIT
V
V
A
mA
mA
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 1.8, 14-Jul-17
Document Number: 85559
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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