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AS6C2008-55TIN

Description
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
Categorystorage    storage   
File Size3MB,13 Pages
ManufacturerAlliance Memory
Environmental Compliance
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AS6C2008-55TIN Overview

SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM

AS6C2008-55TIN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP32,.8,20
Contacts32
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
length18.4 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00001 A
Minimum standby current1.5 V
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width8 mm
Base Number Matches1
February 2007
®
AS6C2008
Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The AS6C2008 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The AS6C2008 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The AS6C2008 operates from a single power
supply of 2.7V ~ 3.6V
.
FEATURES
Access time : 55ns
Low power consumption:
Operating current :20mA (TYP.)
Standby current : 20mA(TYP.)L Version
A (TYP.) LL-version
Single 2.7V ~ 3.6V power supply
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
All Products ROHS Compliant
Package : 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm sTSOP
36-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc Range
Speed
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
AS6C2008 (I)
-40 ~ 85ºC
2
.7 ~ 3.6V
55ns
20µA(L)/1µA(LL)
20mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
A0 - A17
DQ0 – DQ7
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
Vcc
Vss
A0-A17
DECODER
256Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
10/February/07, v.1.0
Alliance Memory Inc.
Page 1 of 13

AS6C2008-55TIN Related Products

AS6C2008-55TIN AS6C2008-55SIN AS6C2008-55STIN AS6C2008-55TINTR AS6C2008-55BIN
Description SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
Peak Reflow Temperature (Celsius) 260 260 260 NOT SPECIFIED 260
Maximum time at peak reflow temperature 40 40 40 NOT SPECIFIED 40
Parts packaging code TSOP1 SOIC TSOP - BGA
package instruction TSOP1, TSSOP32,.8,20 SOP, SOP32,.56 LSSOP, TSSOP32,.56,20 - TFBGA, BGA36,6X8,30
Contacts 32 32 32 - 36
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A - 3A991.B.2.A
Maximum access time 55 ns 55 ns 55 ns - 55 ns
I/O type COMMON COMMON COMMON - COMMON
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 - R-PBGA-B36
length 18.4 mm - 11.8 mm - 8 mm
memory density 2097152 bit 2097152 bit 2097152 bit - 2097152 bit
memory width 8 8 8 - 8
Humidity sensitivity level 3 3 3 - 3
Number of functions 1 1 1 - 1
Number of terminals 32 32 32 - 36
word count 262144 words 262144 words 262144 words - 262144 words
character code 256000 256000 256000 - 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C - 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C - -40 °C
organize 256KX8 256KX8 256KX8 - 256KX8
Output characteristics 3-STATE 3-STATE 3-STATE - 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code TSOP1 SOP LSSOP - TFBGA
Encapsulate equivalent code TSSOP32,.8,20 SOP32,.56 TSSOP32,.56,20 - BGA36,6X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, LOW PROFILE, SHRINK PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL - PARALLEL
power supply 3/3.3 V 3/3.3 V 3/3.3 V - 3/3.3 V
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified
Maximum seat height 1.2 mm 2.997 mm 1.25 mm - 1.2 mm
Maximum standby current 0.00001 A 0.00001 A 0.00001 A - 0.00001 A
Minimum standby current 1.5 V 1.5 V 1.5 V - 1.5 V
Maximum slew rate 0.035 mA 0.035 mA 0.035 mA - 0.035 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V - 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V - 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V - 3 V
surface mount YES YES YES - YES
technology CMOS CMOS CMOS - CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL - INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING - BALL
Terminal pitch 0.5 mm 1.27 mm 0.5 mm - 0.75 mm
Terminal location DUAL DUAL DUAL - BOTTOM
width 8 mm 11.303 mm 8 mm - 6 mm
Base Number Matches 1 1 - 1 1
Factory Lead Time - - 8 weeks 8 weeks 8 weeks
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