MMBD2835LT1G,
MMBD2836LT1G,
SMMBD2835LT1G
Monolithic Dual Switching
Diodes
www.onsemi.com
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT− 23 (TO −236AB)
CASE 318 −08
STYLE 12
CATHODE
1
2
CATHODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
Forward Current
Symbol
V
R
35
75
I
F
100
mAdc
Value
Unit
Vdc
ANODE
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
P
D
225
mW
xxx MG
G
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
mW
= Specific Device Code
A3X = MMBD2835LT1G
SMMBD2835LT1G
A2X = MMBD2836LT1G
M
= Date Code
= Pb−Free Package
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
xxx
1
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW/°C
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBD2835LT1G
SMMBD2835LT1G
MMBD2836LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 7
Publication Order Number:
MMBD2835LT1/D
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
R
= 100
mAdc)
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
Reverse Voltage Leakage Current (Note 3)
(V
R
= 30 Vdc)
MMBD2835LT1G, SMMBD2835LT1G
(V
R
= 50 Vdc)
MMBD2836LT1G
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz)
Forward Voltage
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
V
(BR)
35
75
I
R
−
−
C
T
V
F
−
−
−
t
rr
−
1.0
1.0
1.2
4.0
ns
−
100
100
4.0
pF
Vdc
−
−
nAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while the second diode is unbiased.
820
W
+10 V
2.0 k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
CURVES APPLICABLE TO EACH CATHODE
100
I F, FORWARD CURRENT (mA)
T
A
= 85°C
10
10
T
A
= 150°C
I R , REVERSE CURRENT (
m
A)
T
A
= -40°C
1.0
T
A
= 125°C
T
A
= 25°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
0.01
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
0.001
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
C D , DIODE CAPACITANCE (pF)
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
8.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
www.onsemi.com
3
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
MMBD2835LT1/D
DSP and ARM Processors
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