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TSM6988D

Description
20V Dual N-Channel MOSFET w/ESD Protected
File Size280KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM6988D Overview

20V Dual N-Channel MOSFET w/ESD Protected

TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
20
35 @ V
GS
= 4.5V
40 @ V
GS
= 2.5V
SOT-26
Pin Definition:
1. Gate 2 6. Source 2
2. Drain 5, Drain
3. Gate 1 4. Source 1
I
D
(A)
6.0
5.0
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Dual N-Channel MOSFET
Application
Specially Designed for Li-on Battery Packs
Battery Switch Application
Ordering Information
Part No.
TSM6988DCX6 RF
Package
SOT-26
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
20
±12
6
30
1.4
1.25
0.8
+150
-55 to +150
Unit
V
V
A
A
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
5 sec.
Symbol
JF
JA
Limit
30
50
Unit
o
o
C/W
C/W
1/6
Version: B07

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