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RN1408

Description
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size351KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN1408 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1408 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V
Base Number Matches1

RN1408 Related Products

RN1408 RN1407 RN1407_07 RN1409
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Is it lead-free? Contains lead Contains lead - Contains lead
Is it Rohs certified? conform to conform to - conform to
Parts packaging code SOT-23 SOT-23 - SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 - 3
Reach Compliance Code unknow unknow - unknow
ECCN code EAR99 EAR99 - EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 2.14 BUILT-IN BIAS RESISTOR RATIO IS 4.7 - BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC) 0.1 A 0.1 A - 0.1 A
Collector-based maximum capacity 6 pF 6 pF - 6 pF
Collector-emitter maximum voltage 50 V 50 V - 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 - 70
JEDEC-95 code TO-236AB TO-236AB - TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Maximum operating temperature 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN NPN - NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W - 0.2 W
Certification status Not Qualified Not Qualified - Not Qualified
surface mount YES YES - YES
Terminal form GULL WING GULL WING - GULL WING
Terminal location DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz - 250 MHz
VCEsat-Max 0.3 V 0.3 V - 0.3 V
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