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2SK369

Description
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size751KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK369 Overview

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

2SK369 Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instruction2-5F1D, SC-43, 3 PIN
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.03 A
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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Description Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

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