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2SC4253

Description
Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size566KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC4253 Overview

Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications

2SC4253 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.6 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandHIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)600 MHz
VCEsat-Max0.2 V
Base Number Matches1
2SC4253
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4253
TV Final Picture IF Amplifier Applications
Good linearity of f
T
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
25
4
50
25
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1A
Weight: 0.006 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Saturation voltage
Collector-emitter
Base-emitter
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
V
CE (sat)
V
BE (sat)
C
ob
C
c
½
rbb’
f
T
Test Condition
V
CB
=
30 V, I
E
=
0
V
EB
=
3 V, I
C
=
0
I
C
=
1 mA, I
B
=
0
V
CE
=
10 V, I
C
=
10 mA
I
C
=
15 mA, I
B
=
1.5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
=
10 V, I
C
=
1 mA, f
=
30 MHz
V
CE
=
10 V, I
C
=
10 mA
Min
25
20
250
Typ.
70
1.1
600
Max
0.1
0.1
200
0.2
1.5
1.6
25
V
pF
ps
MHz
Unit
μA
μA
V
Collector output capacitance
Collector-base time constant
Transition frequency
Marking
1
2007-11-01

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