PHOTODIODE
InGaAs APD
G8931-04
Time response characteristics compatible with SONET and G/GE-PON
G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET
(Synchronous Optical Network), G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
Features
Applications
l
High-speed response: 2.5 Gbps
l
Low dark current
l
Low capacitance
l
Active area:
φ0.04
mm
l
High sensitivity
s
General ratings
Parameter
Active area
Symbol
-
l
Optical fiber communications
l
High-speed data links
Value
φ0.04
Unit
mm
s
Absolute maximum ratings
Parameter
Forward current
Reverse current
Operating temperature
Storage temperature
Symbol
I
F
I
R
Topr
Tstg
Value
2
500
-40 to +85
-55 to +125
Unit
mA
µA
°C
°C
s
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Breakdown voltage
Temperature coefficient of V
BR
Dark current
Cut-off frequency
Terminal capacitance
Symbol
λ
λp
S
V
BR
Γ
I
D
fc
Ct
Condition
Min.
-
-
0.8
40
-
-
3
-
Typ.
0.9 to 1.7
1.55
0.9
-
0.11
40
4
0.35
Max.
-
-
-
60
0.16
65
-
0.45
Unit
µm
µm
A/W
V
V/°C
nA
GHz
pF
λ=1.55
µm, M=1
I
D
=100 µA
-40 to +85 °C
V
R
=V
BR
× 0.9
M=10
V
R
=V
BR
× 0.9
f=1 MHz
s
Spectral response
1.0
(Typ. Ta=25 ˚C, M=1)
s
Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 ˚C)
DARK CURRENT, PHOTOCURRENT
100 µA
PHOTOCURRENT
10 µA
1 µA
100 nA
10 nA
DARK CURRENT
1 nA
100 pA
10 pA
1 pA
0
10
20
30
40
50
PHOTO SENSITIVITY (A/W)
0.8
0.6
0.4
0.2
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
WAVELENGTH (µm)
KAPDB0120EA
REVERSE VOLTAGE (V)
KAPDB0123EA
1
InGaAs APD
s
Terminal capacitance vs. reverse voltage
3.0
(Typ. Ta=25 ˚C)
G8931-04
s
Dimensional outline (unit: mm)
5.4 ± 0.2
4.7 ± 0.1
2.7 ± 0.2
3.7 ± 0.2
13 MIN.
KAPDA0034EA
WINDOW
3.0 ± 0.1
TERMINAL CAPACITANCE (pF)
2.0
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.5 ± 0.2
1.0
0
0
10
20
30
40
50
REVERSE VOLTAGE (V)
KAPDB0124EA
CASE
s
Peripheral circuit example of APD
BIAS SUPPLY VOLTAGE
(FOR TEMPERATURE COMPENSATION)
1 MΩ MIN.
CURRENT LIMITTING RESISTANCE
0.1 µF MIN.
(AS CLOSE TO APD AS POSSIBLE)
APD
EXCESSIVE VOLTAGE
PROTECTIVE CIRCUIT
-
+
READOUT
CIRCUIT
HIGH-SPEED OP AMP
LH0032, etc.
KAPDC0005EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KAPD1018E02
Jul. 2007 DN
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