BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 01 — 14 August 2007
Preliminary data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
µ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
3.1 to 3.5
V
DS
(V)
32
P
L
(W)
120
G
p
(dB)
11
η
D
(%)
43
t
r
(ns)
20
t
f
(ns)
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of up to 300
µs
with
δ
of 10 %:
N
Output power = 120 W
N
Gain = 11 dB
N
Efficiency = 43 %
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (3.1 GHz to 3.5 GHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
1.3 Applications
I
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLS6G3135-120 (SOT502A)
1
3
2
2
3
sym112
1
BLS6G3135S-120 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name
BLS6G3135-120
-
Description
Version
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
earless flanged LDMOST ceramic package; 2 leads
SOT502B
Type number
BLS6G3135S-120 -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
−0.5
-
−65
-
Max
60
+13
7.2
+150
225
Unit
V
V
A
°C
°C
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
2 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
T
case
= 85
°C;
P
L
= 120 W
t
p
= 300
µs; δ
= 10 %
t
p
= 100
µs; δ
= 20 %
0.29 0.40 K/W
0.30 0.41 K/W
Typ Max Unit
transient thermal impedance from
junction to mounting base
Symbol Parameter
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V;
I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 8.3 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min
60
1.4
-
27
-
-
-
Typ
-
1.8
-
33
-
13
0.085
Max
-
2.3
5
-
450
-
Unit
V
V
µA
A
nA
S
0.160
Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 300
µ
s;
δ
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 100 mA;
T
case
= 25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol
P
L
V
CC
G
p
IRL
P
L(1dB)
η
D
t
r
t
f
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
rise time
fall time
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
Conditions
Min
-
-
9.5
6
-
39
-
-
Typ
120
-
11
10
130
43
20
6
Max
-
32
-
-
-
-
50
50
Unit
W
V
dB
dB
W
%
ns
ns
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
3 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
Typical impedance
Z
S
Ω
2.7
−
j5.4
3.3
−
j4.7
4.2
−
j4.4
5.2
−
j4.8
5.7
−
j6.2
Z
L
Ω
5.9
−
j5.9
4.5
−
j6.2
3.5
−
j6.0
2.7
−
j5.6
2.0
−
j5.2
Table 8.
f
GHz
3.1
3.2
3.3
3.4
3.5
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 100 mA; P
L
= 120 W; t
p
= 300
µs; δ
= 10 %.
001aag823
001aag824
13
G
p
(dB)
11
η
D
G
p
50
η
D
(%)
40
14
G
p
(dB)
(1)
(2)
(3)
10
9
30
7
20
6
5
10
3
3
3.2
3.4
f (GHz)
0
3.6
2
0
40
80
120
P
L
(W)
160
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
µs; δ
= 10 %;
P
L
= 120 W.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
µs; δ
= 10 %.
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
BLS6G3135-120_6G3135S-120_1
Fig 3. Power gain as a function of load power; typical
values
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
4 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
50
η
D
(%)
40
001aag825
(1)
(2)
(3)
160
(2)
001aag826
P
L
(W)
120
(1)
(3)
30
80
20
40
10
0
0
40
80
120
P
L
(W)
160
0
0
5
10
15
P
i
(W)
20
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
µs; δ
= 10 %.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
µs; δ
= 10 %.
Fig 4. Drain efficiency as a function of load power;
typical values
13
G
p
(dB)
11
η
D
G
p
001aag827
Fig 5. Load power as a function of input power;
typical values
14
G
p
(dB)
(1)
50
η
D
(%)
40
001aag828
(2)
(3)
10
9
30
7
20
6
5
10
3
3
3.2
3.4
f (GHz)
0
3.6
2
0
40
80
120
P
L
(W)
160
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 100
µs; δ
= 20 %;
P
L
= 120 W.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 100
µs; δ
= 20 %.
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values
Fig 7. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120_1
© NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 August 2007
5 of 11
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