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IRFL210PBF

Description
0.96 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
CategoryDiscrete semiconductor    The transistor   
File Size782KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFL210PBF Overview

0.96 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

IRFL210PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-261AA
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)50 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)0.96 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment2 W
Maximum pulsed drain current (IDM)7.7 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
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