0.96 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | International Rectifier ( Infineon ) |
Parts packaging code | TO-261AA |
package instruction | SMALL OUTLINE, R-PDSO-G4 |
Contacts | 4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 50 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (ID) | 0.96 A |
Maximum drain-source on-resistance | 1.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-261AA |
JESD-30 code | R-PDSO-G4 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 2 W |
Maximum pulsed drain current (IDM) | 7.7 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | MATTE TIN |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |