Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | SEMIKRON |
package instruction | R-PSIP-P4 |
Contacts | 4 |
Manufacturer packaging code | CASE G 5 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Minimum breakdown voltage | 1300 V |
Configuration | BRIDGE, 4 ELEMENTS |
Diode component materials | SILICON |
Diode type | BRIDGE RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.25 V |
JESD-30 code | R-PSIP-P4 |
JESD-609 code | e2 |
Maximum non-repetitive peak forward current | 100 A |
Number of components | 4 |
Phase | 1 |
Number of terminals | 4 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -40 °C |
Maximum output current | 2.7 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1300 V |
Maximum reverse current | 0.000005 µA |
Maximum reverse recovery time | 10 µs |
surface mount | NO |
technology | AVALANCHE |
Terminal surface | Tin/Silver (Sn/Ag) |
Terminal form | PIN/PEG |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |