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SKM75GB176DN

Description
80 A, 1700 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size644KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SKM75GB176DN Overview

80 A, 1700 V, N-CHANNEL IGBT

SKM75GB176DN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-204
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts2
Manufacturer packaging codeCASE D 93
Reach Compliance Codecompli
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)80 A
Collector-emitter maximum voltage1700 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
JESD-609 codee2
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)950 ns
Nominal on time (ton)240 ns
SKM 75GB176DN
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
TM
2N
Inverse diode
Trench IGBT Modules
SKM 75GB176DN
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Preliminary Data
Features
Typical Applications
Inverse diode
Thermal characteristics
Mechanical data
GB
1
14-06-2005 SEN
© by SEMIKRON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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